| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N6248 |
Epitaxial-base, silicon P-N-P high-power transistor. -110V, 125W. |
General Electric Solid State |
| 2 |
2N6467 |
Silicon P-N-P medium-power transistor. -110V, 40W. |
General Electric Solid State |
| 3 |
2N6475 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -110V. |
General Electric Solid State |
| 4 |
BD240C |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -115V, 30W. |
General Electric Solid State |
| 5 |
BD242C |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -115V, 40W. |
General Electric Solid State |
| 6 |
BD244C |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -115V, 65W. |
General Electric Solid State |
| 7 |
EN8987 |
Power MOSFET -100V -11A 275m Ohm Pch Single TP/TP-FA |
ON Semiconductor |
| 8 |
IRF9241 |
-9A and -11A, -150V and -200V, 0.50 and 0.70 Ohm, P-Channel Power MOSFETs |
Intersil |
| 9 |
IRF9242 |
-9A and -11A, -150V and -200V, 0.50 and 0.70 Ohm, P-Channel Power MOSFETs |
Intersil |
| 10 |
IRF9243 |
-9A and -11A, -150V and -200V, 0.50 and 0.70 Ohm, P-Channel Power MOSFETs |
Intersil |
| 11 |
NTMS4177P |
Power MOSFET -30 V, -11.4 A, P-Channel, SOIC-8 |
ON Semiconductor |
| 12 |
TGL41 -11 |
SURFACE MOUNT TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR |
General Semiconductor |
| 13 |
TGL41 -11A |
SURFACE MOUNT TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR |
General Semiconductor |
| | | |
