| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1.5FMCJ130 |
Surface mount transient voltage suppressor (TVS). 1500W peak power, 5.0W steady state. Breakdown voltage 117V(min), 143V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 2 |
1.5KE130 |
GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 117V(min), 143V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 3 |
1.5KE130C |
Transient voltage suppressor. 1500 W. Breakdown voltage 117.0 V(min), 143 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 4 |
2N3442 |
High voltage silicon N-P-N transistor. 160V, 117W. |
General Electric Solid State |
| 5 |
2N3442 |
10 AMPERE POWER TRANSISTOR NPN SILICON 140 VOLTS 117 WATTS |
Motorola |
| 6 |
2N6371 |
High-power silicon N-P-N transistor. 50V, 117W. |
General Electric Solid State |
| 7 |
AK5393 |
24-bit 96K 117dB pro audio ADC |
AKM |
| 8 |
BD142 |
Silicon N-P-N high power transistor. 50V, 117W. |
General Electric Solid State |
| 9 |
BD181 |
Silicon N-P-N high power transistor. 55V, 117W. |
General Electric Solid State |
| 10 |
BD182 |
Silicon N-P-N high power transistor. 70V, 117W. |
General Electric Solid State |
| 11 |
BD183 |
Silicon N-P-N high power transistor. 85V, 117W. |
General Electric Solid State |
| 12 |
BDX64 |
16A peak complementary darlington silicon power PNP transistor 117W |
Motorola |
| 13 |
BDX64A |
16A peak complementary darlington silicon power PNP transistor 117W |
Motorola |
| 14 |
BDX64B |
16A peak complementary darlington silicon power PNP transistor 117W |
Motorola |
| 15 |
BDX64C |
16A peak complementary darlington silicon power PNP transistor 117W |
Motorola |
| 16 |
BDX65 |
16A peak complementary darlington silicon power NPN transistor 117W |
Motorola |
| 17 |
BDX65A |
16A peak complementary darlington silicon power NPN transistor 117W |
Motorola |
| 18 |
BDX65B |
16A peak complementary darlington silicon power NPN transistor 117W |
Motorola |
| 19 |
BDX65C |
16A peak complementary darlington silicon power NPN transistor 117W |
Motorola |
| 20 |
CPH6445 |
N-Channel Power MOSFET, 60V, 3.5A, 117mOhm, Single CPH6 |
ON Semiconductor |
| 21 |
FDP083N15A |
N-Channel PowerTrench� MOSFET 150V, 117A, 8.3m? |
Fairchild Semiconductor |
| 22 |
GS81032AQ-4 |
11ns 117MHz 32K x 32 1Mb synchronous burst SRAM |
GSI Technology |
| 23 |
GS81032AQ-4I |
11ns 117MHz 32K x 32 1Mb synchronous burst SRAM |
GSI Technology |
| 24 |
GS81032AT-4 |
11ns 117MHz 32K x 32 1Mb synchronous burst SRAM |
GSI Technology |
| 25 |
GS81032AT-4I |
11ns 117MHz 32K x 32 1Mb synchronous burst SRAM |
GSI Technology |
| 26 |
NTD4804N |
Power MOSFET, 30 V, 117 A, Single N-Channel |
ON Semiconductor |
| 27 |
NTMFS4898NF |
Power MOSFET, 30 V, 117 A, Single N-Channel |
ON Semiconductor |
| 28 |
P4KE130C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 117 V, Vbr(max) = 143 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 29 |
P6KE130C |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 117.0 V, Vbr(max) = 143 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 30 |
SD1100C04L |
400V 1170A Std. Recovery Diode in a DO-200AB (B-Puk)package |
International Rectifier |
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