| No. |
Part Name |
Description |
Manufacturer |
| 1 |
18TQ035 |
35V 18A Schottky Discrete Diode in a TO-220AC package |
International Rectifier |
| 2 |
18TQ035S |
35V 18A Schottky Discrete Diode in a D2-Pak package |
International Rectifier |
| 3 |
18TQ035STRL |
35V 18A Schottky Discrete Diode in a D2-Pak package |
International Rectifier |
| 4 |
18TQ035STRR |
35V 18A Schottky Discrete Diode in a D2-Pak package |
International Rectifier |
| 5 |
18TQ040 |
40V 18A Schottky Discrete Diode in a TO-220AC package |
International Rectifier |
| 6 |
18TQ040S |
40V 18A Schottky Discrete Diode in a D2-Pak package |
International Rectifier |
| 7 |
18TQ045 |
45V 18A Schottky Discrete Diode in a TO-220AC package |
International Rectifier |
| 8 |
18TQ045S |
45V 18A Schottky Discrete Diode in a D2-Pak package |
International Rectifier |
| 9 |
18TQ045STRL |
45V 18A Schottky Discrete Diode in a D2-Pak package |
International Rectifier |
| 10 |
18TQ045STRR |
45V 18A Schottky Discrete Diode in a D2-Pak package |
International Rectifier |
| 11 |
18TQ050 |
Diode Schottky 50V 18A 2-Pin(2+Tab) TO-220AC Tube |
New Jersey Semiconductor |
| 12 |
2SK1280 |
N-Channel MOS-FET(500V, 0.5Ohm, 18A, 150W) |
Fuji Electric |
| 13 |
APT12067B2LL |
POWER MOS 7 1200V 18A 0.670 Ohm |
Advanced Power Technology |
| 14 |
APT12067LLL |
POWER MOS 7 1200V 18A 0.670 Ohm |
Advanced Power Technology |
| 15 |
APT6035BVR |
POWER MOS V 600V 18A 0.350 Ohm |
Advanced Power Technology |
| 16 |
APT6035SVR |
POWER MOS V 600V 18A 0.350 Ohm |
Advanced Power Technology |
| 17 |
BLF278 |
Trans RF MOSFET N-CH 125V 18A 5-Pin CDFM |
New Jersey Semiconductor |
| 18 |
BYV32-100 |
Dual Ultrafast Rectifiers, Forward Current 18A, Reverse Recovery Time 25ns, Reverse Voltage 50 to 200V |
Vishay |
| 19 |
BYV32-150 |
Dual Ultrafast Rectifiers, Forward Current 18A, Reverse Recovery Time 25ns, Reverse Voltage 50 to 200V |
Vishay |
| 20 |
BYV32-200 |
Dual Ultrafast Rectifiers, Forward Current 18A, Reverse Recovery Time 25ns, Reverse Voltage 50 to 200V |
Vishay |
| 21 |
BYV32-50 |
Dual Ultrafast Rectifiers, Forward Current 18A, Reverse Recovery Time 25ns, Reverse Voltage 50 to 200V |
Vishay |
| 22 |
BYVB32-100 |
Dual Ultrafast Rectifiers, Forward Current 18A, Reverse Recovery Time 25ns, Reverse Voltage 50 to 200V |
Vishay |
| 23 |
BYVB32-150 |
Dual Ultrafast Rectifiers, Forward Current 18A, Reverse Recovery Time 25ns, Reverse Voltage 50 to 200V |
Vishay |
| 24 |
BYVB32-200 |
Dual Ultrafast Rectifiers, Forward Current 18A, Reverse Recovery Time 25ns, Reverse Voltage 50 to 200V |
Vishay |
| 25 |
BYVB32-50 |
Dual Ultrafast Rectifiers, Forward Current 18A, Reverse Recovery Time 25ns, Reverse Voltage 50 to 200V |
Vishay |
| 26 |
BYVF32-100 |
Dual Ultrafast Rectifiers, Forward Current 18A, Reverse Recovery Time 25ns, Reverse Voltage 50 to 200V |
Vishay |
| 27 |
BYVF32-150 |
Dual Ultrafast Rectifiers, Forward Current 18A, Reverse Recovery Time 25ns, Reverse Voltage 50 to 200V |
Vishay |
| 28 |
BYVF32-200 |
Dual Ultrafast Rectifiers, Forward Current 18A, Reverse Recovery Time 25ns, Reverse Voltage 50 to 200V |
Vishay |
| 29 |
BYVF32-50 |
Dual Ultrafast Rectifiers, Forward Current 18A, Reverse Recovery Time 25ns, Reverse Voltage 50 to 200V |
Vishay |
| 30 |
ENA2152 |
N-Channel Power MOSFET, 12V, 18A, 5.9mOhm, Dual EFCP |
ON Semiconductor |
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