| No. |
Part Name |
Description |
Manufacturer |
| 1 |
3001-2 |
1 W, 28 V, 3 GHz, microwave CW bipolar |
Acrian |
| 2 |
3003 |
3 W, 28 V, 3 GHz, microwave CW bipolar |
Acrian |
| 3 |
3003-2 |
3 W, 28 V, 3 GHz, microwave CW bipolar |
Acrian |
| 4 |
3003-3 |
3 W, 28 V, 3 GHz, microwave CW bipolar |
Acrian |
| 5 |
3005 |
5 W, 28 V, 3 GHz, microwave CW bipolar |
Acrian |
| 6 |
3005-2 |
5 W, 28 V, 3 GHz, microwave CW bipolar |
Acrian |
| 7 |
3005-3 |
5 W, 28 V, 3 GHz, microwave CW bipolar |
Acrian |
| 8 |
8133A |
Timing Generator, 3 GHz |
Agilent (Hewlett-Packard) |
| 9 |
86207A |
86207A RF Bridge, 75 Ohm, 300 kHz to 3 GHz |
Agilent (Hewlett-Packard) |
| 10 |
AT-213 |
Digital Attenuator, 15 dB, 4-Bit, TTL Driver, DC - 3 GHz |
Tyco Electronics |
| 11 |
AT-213PIN |
Digital Attenuator, 15 dB, 4-Bit, TTL Driver, DC - 3 GHz |
Tyco Electronics |
| 12 |
AWS5503-S15 |
GaAs IC High Power SPDT Reflective Switch Positive Control DC - 3 GHz |
Anadigics Inc |
| 13 |
BAR63 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 14 |
BAR63-03 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 15 |
BAR63-03W |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 16 |
BAR63-04 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 17 |
BAR63-04W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 18 |
BAR63-05 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 19 |
BAR63-05W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 20 |
BAR63-06 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 21 |
BAR63-06W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 22 |
BAR63-W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 23 |
BFG17 |
NPN 3 GHz wideband transistor |
Philips |
| 24 |
BFG17A |
NPN 3 GHz wideband transistor |
Philips |
| 25 |
BFS17A |
NPN 3 GHz wideband transistor |
NXP Semiconductors |
| 26 |
BFS17A |
NPN 3 GHz wideband transistor |
Philips |
| 27 |
CGH27015 |
15W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz |
Wolfspeed |
| 28 |
CGH27030 |
30W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz |
Wolfspeed |
| 29 |
CGH27060 |
8W (average), 28V, GaN HEMT for linear communications ranging from VHF to 3 GHz |
Wolfspeed |
| 30 |
CGHV40100 |
100W, DC CGHV40100 3 GHz, 50V, GaN HEMT |
Wolfspeed |
| | | |
