| No. |
Part Name |
Description |
Manufacturer |
| 1 |
0663.315HXLL |
LT-5 tm time lag fuse. Long lead (bulk) 100 pieces. Ampere rating .315, voltage rating 250, nominal resistance cold ohms 326. |
Littelfuse |
| 2 |
0663.315HXSL |
LT-5 tm time lag fuse. Short lead (bulk) 100 pieces. Ampere rating .315, voltage rating 250, nominal resistance cold ohms 326. |
Littelfuse |
| 3 |
0663.315ZRLL |
LT-5 tm time lag fuse. Long lead (tape and reel) 750 pieces. Ampere rating .315, voltage rating 250, nominal resistance cold ohms 326. |
Littelfuse |
| 4 |
1.5KE400C |
1500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 324.00 V. Test current IT = 1 mA. |
Bytes |
| 5 |
1504-320F |
Delay 320 +/-16 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
| 6 |
15KP180 |
Glass passivated junction transient voltage suppressor. Vrwm = 180 V. Vbr(min/max) = 198/253.8 V @ It = 1.0 mA. Ir = 5 uA. Vc = 322 V @ Ipp = 47 A. |
Panjit International Inc |
| 7 |
15KP180C |
Glass passivated junction transient voltage suppressor. Vrwm = 180 V. Vbr(min/max) = 198/253.8 V @ It = 1.0 mA. Ir = 5 uA. Vc = 322 V @ Ipp = 47 A. |
Panjit International Inc |
| 8 |
15KP200A |
Glass passivated junction transient voltage suppressor. Vrwm = 200 V. Vbr(min/max) = 220/256.0 V @ It = 1.0 mA. Ir = 5 uA. Vc = 324 V @ Ipp = 46 A. |
Panjit International Inc |
| 9 |
15KP200CA |
Glass passivated junction transient voltage suppressor. Vrwm = 200 V. Vbr(min/max) = 220/256.0 V @ It = 1.0 mA. Ir = 5 uA. Vc = 324 V @ Ipp = 46 A. |
Panjit International Inc |
| 10 |
1N2666 |
Rectifier Diode 3200V 1.5A |
Motorola |
| 11 |
1N5111 |
Zener Diode 320V 1W |
Motorola |
| 12 |
1N5111 |
Diode Zener Single 320V 5% 3W 2-Pin Case A |
New Jersey Semiconductor |
| 13 |
1N5131 |
Zener Diode 320V 3W |
Motorola |
| 14 |
1N6121 |
Diode TVS Single Bi-Dir 32.7V 500W 2-Pin Case G-95 |
New Jersey Semiconductor |
| 15 |
1N6121A |
Diode TVS Single Bi-Dir 32.7V 500W 2-Pin |
New Jersey Semiconductor |
| 16 |
1N6157 |
Diode TVS Single Bi-Dir 32.7V 1.5KW 2-Pin |
New Jersey Semiconductor |
| 17 |
1N6157A |
Diode TVS Single Bi-Dir 32.7V 1.5KW 2-Pin |
New Jersey Semiconductor |
| 18 |
240U060D |
600V 320A Std. Recovery Diode in a DO-205AB (DO-9)package |
International Rectifier |
| 19 |
240U080D |
800V 320A Std. Recovery Diode in a DO-205AB (DO-9)package |
International Rectifier |
| 20 |
240U100D |
1000V 320A Std. Recovery Diode in a DO-205AB (DO-9)package |
International Rectifier |
| 21 |
240U120D |
1200V 320A Std. Recovery Diode in a DO-205AB (DO-9)package |
International Rectifier |
| 22 |
240U60D |
600V 320A Std. Recovery Diode in a DO-205AB (DO-9)package |
International Rectifier |
| 23 |
240U80D |
800V 320A Std. Recovery Diode in a DO-205AB (DO-9)package |
International Rectifier |
| 24 |
240UR060D |
600V 320A Std. Recovery Diode in a DO-205AB (DO-9)package |
International Rectifier |
| 25 |
240UR080D |
800V 320A Std. Recovery Diode in a DO-205AB (DO-9)package |
International Rectifier |
| 26 |
240UR100D |
1000V 320A Std. Recovery Diode in a DO-205AB (DO-9)package |
International Rectifier |
| 27 |
240UR120D |
1200V 320A Std. Recovery Diode in a DO-205AB (DO-9)package |
International Rectifier |
| 28 |
240UR60D |
600V 320A Std. Recovery Diode in a DO-205AB (DO-9)package |
International Rectifier |
| 29 |
240UR80D |
800V 320A Std. Recovery Diode in a DO-205AB (DO-9)package |
International Rectifier |
| 30 |
24AA32A |
The 24AA32A is a 4K x 8 (32K bit) Serial Electrically Erasable PROM memory with an I2C™ compatible 2-wire serial interface bus. The 24AA32A features a page-write capability of up to 32 bytes of data and is capable of both r |
Microchip |
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