| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1.5FMCJ300 |
Surface mount transient voltage suppressor (TVS). 1500W peak power, 5.0W steady state. Breakdown voltage 270V(min), 330V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 2 |
1.5KE300 |
GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 270V(min), 330V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 3 |
1.5KE300C |
Transient voltage suppressor. 1500 W. Breakdown voltage 270.0 V(min), 330.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 4 |
1N1950 |
Zener Diode 330V |
Motorola |
| 5 |
1N1977 |
Zener Diode 330V |
Motorola |
| 6 |
1N2004 |
Zener Diode 330V |
Motorola |
| 7 |
1N4994 |
Zener Diode 330V 3W |
Motorola |
| 8 |
1N4994 |
Diode Zener Single 330V 5% 5W 2-Pin Case E |
New Jersey Semiconductor |
| 9 |
1N5112 |
Zener Diode 330V 1W |
Motorola |
| 10 |
1Z330 |
Silicon diffused type zener diode. Typ zener voltage 330 V. |
Panasonic |
| 11 |
2N3669 |
12.5A silicon controlled rectifier. Vrm(non-rep) 330V. |
General Electric Solid State |
| 12 |
2N3871 |
35A silicon controlled rectifier. Vrsom(non-rep) 330V. |
General Electric Solid State |
| 13 |
2N3897 |
35A silicon controlled rectifier. Vrsom(non-rep) 330V. |
General Electric Solid State |
| 14 |
2SD917 |
Silicon NPN triple diffused planar transistor, 330V, 7A |
Panasonic |
| 15 |
301U120 |
1200V 330A Std. Recovery Diode in a DO-205AB (DO-9)package |
International Rectifier |
| 16 |
301U120 |
Diode Switching 1.2KV 330A 2-Pin DO-205AB |
New Jersey Semiconductor |
| 17 |
301U160 |
1600V 330A Std. Recovery Diode in a DO-205AB (DO-9)package |
International Rectifier |
| 18 |
301U160 |
Diode Switching 1.6KV 330A 2-Pin DO-9 |
New Jersey Semiconductor |
| 19 |
301U200 |
2000V 330A Std. Recovery Diode in a DO-205AB (DO-9)package |
International Rectifier |
| 20 |
301U200 |
Diode Switching 2KV 330A 2-Pin DO-9 |
New Jersey Semiconductor |
| 21 |
301U80 |
800V 330A Std. Recovery Diode in a DO-205AB (DO-9)package |
International Rectifier |
| 22 |
301U80 |
Diode Switching 800V 330A 2-Pin DO-205AB |
New Jersey Semiconductor |
| 23 |
301UA200 |
Diode Switching 2KV 330A 2-Pin DO-9 |
New Jersey Semiconductor |
| 24 |
301URA240 |
Diode Switching 2KV 330A 2-Pin DO-9 |
New Jersey Semiconductor |
| 25 |
301URA80 |
Diode Switching 800V 330A 2-Pin DO-9 |
New Jersey Semiconductor |
| 26 |
3EZ330D1 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 330 V. 1% tolerance. |
Motorola |
| 27 |
3EZ330D10 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 330 V. 10% tolerance. |
Motorola |
| 28 |
3EZ330D2 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 330 V. 2% tolerance. |
Motorola |
| 29 |
3EZ330D5 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 330 V. |
Motorola |
| 30 |
ADV7123 |
CMOS, 330 MHz Triple 10-Bit High Speed Video DAC Data Sheet (Rev D, 07/2010) |
Analog Devices |
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