| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1.5KE440C |
1500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 356.00 V. Test current IT = 1 mA. |
Bytes |
| 2 |
1.85 mm Subminiature Ceramic Filter |
1.85 mm Subminiature Ceramic Filter - Frequency range from 350 MHz to 6 GHz |
Skyworks Solutions |
| 3 |
1004MP |
4 W, 35 V, 960-1215 MHz common base transistor |
GHz Technology |
| 4 |
10TQ030 |
Diode Schottky 35V 10A 2-Pin(2+Tab) TO-220AC |
New Jersey Semiconductor |
| 5 |
10TQ035 |
Diode Schottky 35V 10A 2-Pin(2+Tab) TO-220AC |
New Jersey Semiconductor |
| 6 |
1503J-35G |
Max delay 35 ns, Mechanically variable delay line |
Data Delay Devices Inc |
| 7 |
15046-ECG |
Surge arrester (gas filled). Nominal breakdown voltage 350VDC |
NTE Electronics |
| 8 |
15CGQ100 |
Diode Schottky 100V 35A 3-Pin(3+Tab) TO-254AA |
New Jersey Semiconductor |
| 9 |
15KP200 |
Glass passivated junction transient voltage suppressor. Vrwm = 200 V. Vbr(min/max) = 220/282.0 V @ It = 1.0 mA. Ir = 5 uA. Vc = 358 V @ Ipp = 42 A. |
Panjit International Inc |
| 10 |
15KP200C |
Glass passivated junction transient voltage suppressor. Vrwm = 200 V. Vbr(min/max) = 220/282.0 V @ It = 1.0 mA. Ir = 5 uA. Vc = 358 V @ Ipp = 42 A. |
Panjit International Inc |
| 11 |
15KP220A |
Glass passivated junction transient voltage suppressor. Vrwm = 220 V. Vbr(min/max) = 242/281.6 V @ It = 1.0 mA. Ir = 5 uA. Vc = 356 V @ Ipp = 42 A. |
Panjit International Inc |
| 12 |
15KP220CA |
Glass passivated junction transient voltage suppressor. Vrwm = 220 V. Vbr(min/max) = 242/281.6 V @ It = 1.0 mA. Ir = 5 uA. Vc = 356 V @ Ipp = 42 A. |
Panjit International Inc |
| 13 |
16RIA140 |
1400V 35A Phase Control SCR in a TO-208AA (TO-48) package |
International Rectifier |
| 14 |
16RIA160 |
1600V 35A Phase Control SCR in a TO-208AA (TO-48) package |
International Rectifier |
| 15 |
18TQ035 |
Diode Schottky 35V 16A 2-Pin(2+Tab) TO-220AC |
New Jersey Semiconductor |
| 16 |
1N1183 |
50V 35A Std. Recovery Diode in a DO-203AB (DO-5)package |
International Rectifier |
| 17 |
1N1183 |
Silicon Diode Rectifier, cathode connected to case, 35A 50V |
Motorola |
| 18 |
1N1183 |
50 V, 35 A standard recovery rectifier |
Solid State Devices Inc |
| 19 |
1N1183R |
Silicon Diode Rectifier, anode connected to case, 35A 50V |
Motorola |
| 20 |
1N1184 |
100V 35A Std. Recovery Diode in a DO-203AB (DO-5)package |
International Rectifier |
| 21 |
1N1184 |
Silicon Diode Rectifier, cathode connected to case, 35A 100V |
Motorola |
| 22 |
1N1184 |
Diode Switching 100V 35A 2-Pin DO-5 |
New Jersey Semiconductor |
| 23 |
1N1184 |
100 V, 35 A standard recovery rectifier |
Solid State Devices Inc |
| 24 |
1N1184R |
100V 35A Std. Recovery Diode in a DO-203AB (DO-5)package |
International Rectifier |
| 25 |
1N1184R |
Silicon Diode Rectifier, anode connected to case, 35A 100V |
Motorola |
| 26 |
1N1185 |
150V 35A Std. Recovery Diode in a DO-203AB (DO-5)package |
International Rectifier |
| 27 |
1N1185 |
Silicon Diode Rectifier, cathode connected to case, 35A 150V |
Motorola |
| 28 |
1N1185 |
150 V, 35 A standard recovery rectifier |
Solid State Devices Inc |
| 29 |
1N1185R |
Silicon Diode Rectifier, anode connected to case, 35A 150V |
Motorola |
| 30 |
1N1186 |
200V 35A Std. Recovery Diode in a DO-203AB (DO-5)package |
International Rectifier |
| | | |
