| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1.5FMCJ350 |
Surface mount transient voltage suppressor (TVS). 1500W peak power, 5.0W steady state. Breakdown voltage 315V(min), 385V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 2 |
1.5KE350 |
315- 385V transient voltage suppressor |
DC Components |
| 3 |
1.5KE350 |
GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 315V(min), 385V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 4 |
1.5KE350C |
Transient voltage suppressor. 1500 W. Breakdown voltage 315.0 V(min), 385.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 5 |
FCD9N60NTM |
N-Channel SupreMOS� MOSFET 600V, 9A, 385m? |
Fairchild Semiconductor |
| 6 |
FCP9N60N |
N-Channel SupreMOS� MOSFET 600V, 9A, 385m? |
Fairchild Semiconductor |
| 7 |
FCPF9N60NT |
N-Channel SupreMOS� MOSFET 600V, 9A, 385m? |
Fairchild Semiconductor |
| 8 |
KM44C256C-6 |
60ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 9 |
KM44C256C-7 |
70ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 10 |
KM44C256C-8 |
80ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 11 |
KM44C256CL-6 |
60ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 12 |
KM44C256CL-7 |
70ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 13 |
KM44C256CL-8 |
80ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 14 |
KM44C256CSL-6 |
60ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 15 |
KM44C256CSL-7 |
70ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 16 |
KM44C256CSL-8 |
80ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 17 |
KM44C256D-6 |
60ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 18 |
MK4096N-16 |
4096x1-bit dynamic RAM, 300ns acces time, 425ns cycle time, max. power 385mW. |
Mostek |
| 19 |
MK4096P-16 |
4096x1-bit dynamic RAM, 300ns acces time, 425ns cycle time, max. power 385mW. |
Mostek |
| 20 |
P4KE350C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 315 V, Vbr(max) = 385 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 21 |
P6KE350C |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 315 V, Vbr(max) = 385 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 22 |
RF2637 |
12 - 385 MHz Receive AGC Amplifier |
Qorvo |
| 23 |
V620ZA05 |
Radial lead metal-oxide varistors, 385V |
Harris Semiconductor |
| | | |
