No. |
Part Name |
Description |
Manufacturer |
1 |
15KP170A |
Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/217.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 275 V @ Ipp = 55 A. |
Panjit International Inc |
2 |
15KP170CA |
Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/217.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 275 V @ Ipp = 55 A. |
Panjit International Inc |
3 |
CM420855 |
SCR/Diode POW-R-BLOK�� Modules 55 Amperes/800 Volts |
Powerex Power Semiconductors |
4 |
CM421255 |
SCR/Diode POW-R-BLOK�� Modules 55 Amperes/1200-1600 Volts |
Powerex Power Semiconductors |
5 |
CM421655 |
SCR/Diode POW-R-BLOK�� Modules 55 Amperes/1200-1600 Volts |
Powerex Power Semiconductors |
6 |
CM430855 |
Dual SCR POW-R-BLOK�� Modules 55 Amperes/800 Volts |
Powerex Power Semiconductors |
7 |
CM431255 |
Dual SCR POW-R-BLOK�� Modules 55 Amperes/1200-1600 Volts |
Powerex Power Semiconductors |
8 |
CM431655 |
Dual SCR POW-R-BLOK�� Modules 55 Amperes/1200-1600 Volts |
Powerex Power Semiconductors |
9 |
IRF6614TR1PBF |
A 40V Single N-Channel HEXFET Power MOSFET in a DirectFET ST package rated at 55 amperes. |
International Rectifier |
10 |
IRF6621TR1 |
Leaded A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 55 amperes. |
International Rectifier |
11 |
IRF6621TR1PBF |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 55 amperes. |
International Rectifier |
12 |
IRF6621TRPBF |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 55 amperes. |
International Rectifier |
13 |
IRF6623TR1PBF |
A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET ST package rated at 55 amperes. |
International Rectifier |
14 |
IRF6668 |
A 80V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 55 amperes. |
International Rectifier |
15 |
IRF6668TR1PBF |
A 80V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 55 amperes. |
International Rectifier |
16 |
IRF6668TRPBF |
A 80V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 55 amperes. |
International Rectifier |
17 |
MTB55N06Z |
TMOS POWER FET 55 AMPERES 60 VOLTS |
Motorola |
18 |
MTB55N06Z |
Power MOSFET 55 Amps, 60 Volts |
ON Semiconductor |
19 |
MTB55N06Z-D |
Power MOSFET 55 Amps, 60 Volts N-Channel D2PAK |
ON Semiconductor |
20 |
MTP55N06 |
TMOS POWER FET 55 AMPERES 60 VOLTS RDS(on) = 18 mohm |
Motorola |
21 |
MTP55N06Z |
TMOS POWER FET 55 AMPERES 60 VOLTS RDS(on) = 18 mohm |
Motorola |
22 |
MTY55N20E |
TMOS POWER FET 55 AMPERES 200 VOLTS RDS(on) = 0.028 OHM |
Motorola |
23 |
MTY55N20E |
OBSOLETE - Power MOSFET 55 Amps, 200 Volts |
ON Semiconductor |
24 |
MTY55N20E-D |
Power MOSFET 55 Amps, 200 Volts N-Channel TO-264 |
ON Semiconductor |
25 |
NTE5539 |
Silicon Controlled Rectifier (SCR) 55 Amps |
NTE Electronics |
26 |
NTE5540 |
Silicon Controlled Rectifier (SCR) 55 Amps |
NTE Electronics |
27 |
PB-IRF6614 |
Leaded A 40V Single N-Channel HEXFET Power MOSFET in a DirectFET ST package rated at 55 amperes. |
International Rectifier |
28 |
PB-IRF6621 |
Leaded A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 55 amperes. |
International Rectifier |
29 |
PB-IRF6623 |
Leaded A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET ST package rated at 55 amperes. |
International Rectifier |
30 |
PB-IRF6668 |
Leaded A 80V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 55 amperes. |
International Rectifier |
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