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Datasheets for 560

Datasheets found :: 74
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No. Part Name Description Manufacturer
1 1N1953 Zener Diode 560V Motorola
2 1N1980 Zener Diode 560V Motorola
3 1N2007 Zener Diode 560V Motorola
4 1N5398G 1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 800 V, max RMS voltage 560 V, max D. C blocking voltage 800 V. Jinan Gude Electronic Device
5 2SA1995 450mW Lead frame PNP transistor, maximum rating: -50V Vceo, -100mA Ic, 120 to 560 hFE. Isahaya Electronics Corporation
6 APA3010QGC 3.0 x 1.0 mm SMD chip LED lamp. Green (peak wavelehgth 560 nm). Lens type water clear. Kingbright Electronic
7 APB3025SRQGCPRV 3.0 x 2.5 mm surface mount LED lamp. Super bright red, green (peak wavelength 660 nm, 560 nm). Lens type water clear. Kingbright Electronic
8 APTB1615SRQGWPR 1.6 x 1.5 mm bi-color SMD chip LED lamp. Super bright red (peak wavelength 660 nm), green (peak wavelength 560 nm). Lens type white diffused. Kingbright Electronic
9 APTR3216QGW 3.2 x 1.6 mm SMD chip LED lamp. Green (peak wavelength 560 nm). Lens type white diffused. Kingbright Electronic
10 CIL1020YBP 0.900W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 560 hFE Continental Device India Limited
11 CSC1740S 0.300W General Purpose NPN Plastic Leaded Transistor. 40V Vceo, 0.100A Ic, 270 - 560 hFE Continental Device India Limited
12 CSC4115BC 0.400W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 2.000A Ic, 180 - 560 hFE Continental Device India Limited
13 CSC4115C 0.400W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 2.000A Ic, 270 - 560 hFE Continental Device India Limited
14 CSD545 0.600W Low Frequency NPN Plastic Leaded Transistor. 25V Vceo, 1.000A Ic, 60 - 560 hFE. Continental Device India Limited
15 CSD545G 0.600W Low Frequency NPN Plastic Leaded Transistor. 25V Vceo, 1.000A Ic, 280 - 560 hFE. Continental Device India Limited
16 DB106 Single-phase silicon bridge rectifier. Current 1.0A. Maximum recurrent peak reverse voltage 800V. Maximum RMS bridge input voltage 560V. Maximum DC blocking voltage 800V. Wing Shing Computer Components
17 DS912_56 Rectifier diode. All purpose high power rectifier diodes, non-controllable rectifiers. Free-wheeling diodes, welding & traction. Vrrm = 5600V, Vrsm = 5700V. USHA India LTD
18 E1003 Mega bright white LED, T-1 3/4. Lens clear. Luminous intensity at 20mA: 1400mcd(min), 5600mcd(typ). Forward voltage at 20mA: 3.6V(typ), 4.0V(max). Gilway Technical Lamp
19 FFM106 Surface mount glass passivated fast recovery silicon rectifier. MaxVRRM = 800V, maxVRMS = 560V, maxVDC = 800V. Current 1.0A. Rectron Semiconductor
20 HA5025EVAL Triple/ 560MHz/ Low Power/ Video Operational Amplifier Intersil
21 HFA1305 Op Amp, Triple 560/675MHz, Video, Low Power, Current Feedback Intersil
22 HFA1305IB Triple/ 560MHz/ Low Power/ Video Operational Amplifier Intersil
23 HFA1405IB Quad/ 560MHz/ Low Power/ Video Operational Amplifier Intersil
24 HFA1405IP Quad/ 560MHz/ Low Power/ Video Operational Amplifier Intersil
25 KBPC1508 Single-phase silicon bridge rectifier. Current 15A. Maximum recurrent peak reverse voltage 800V. Maximum RMS voltage 560V. Maximum DC blocking voltage 800V Wing Shing Computer Components
26 KBPC3508 Single-phase silicon bridge rectifier. Current 35A. Maximum recurrent peak reverse voltage 800V. Maximum RMS bridge input voltage 560V. Maximum DC blocking voltage 800V Wing Shing Computer Components
27 MAX4174BAEUK-T Single, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 10, 1+ (Rf/Dg) noninverting gain 11, -3dB BW 560kHz. MAXIM - Dallas Semiconductor
28 MAX4175BAEUK-T Single, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 10, 1+ (Rf/Dg) noninverting gain 11, -3dB BW 560kHz. MAXIM - Dallas Semiconductor
29 MAX4274BAESA Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 10, 1+ (Rf/Dg) noninverting gain 11, -3dB BW 560kHz. MAXIM - Dallas Semiconductor
30 MAX4274BAEUA Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 10, 1+ (Rf/Dg) noninverting gain 11, -3dB BW 560kHz. MAXIM - Dallas Semiconductor


Datasheets found :: 74
Page: | 1 | 2 | 3 |



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