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Datasheets for 60W

Datasheets found :: 129
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 2N5346 7 Ampere, medium-power 60W NPN silicon transistor Motorola
2 2N5347 7 Ampere, medium-power 60W NPN silicon transistor Motorola
3 2N5348 7 Ampere, medium-power 60W NPN silicon transistor Motorola
4 2N5349 7 Ampere, medium-power 60W NPN silicon transistor Motorola
5 2N5477 7 Ampere 60W medium-power NPN silicon transistor Motorola
6 2N5478 7 Ampere 60W medium-power NPN silicon transistor Motorola
7 2N5479 7 Ampere 60W medium-power NPN silicon transistor Motorola
8 2N5480 7 Ampere 60W medium-power NPN silicon transistor Motorola
9 2N5643 V(cbo): 65V; V(ceo): 35V; V(ebo): 4V; 60W; VHF power transistor SGS Thomson Microelectronics
10 2N6439 Controlled Q broadband NPN silicon RF power transistor 60W - 225-400MHz Motorola
11 2SA1207 High-Voltage Switching AF 60W Predriver Applications SANYO
12 2SB817 PNP Epitaxial Planar Silicon Transistors 140V/12A AF 60W Output Applications SANYO
13 2SC2909 NPN Epitaxial Planar Silicon Transistors High-Voltage Switching AF 60W Predriver Applications SANYO
14 2SD1047 NPN Triple Diffused Planar Silicon Transistors 140V/12A AF 60W Output Applications SANYO
15 2SD633P V(cbo): 100V; V(ceo): 85V; V(ebo): 6V; 6A; 60W; epitaxial planar silicon transistor. For 85V/6A, AF 35 to 45W output applications SANYO
16 BD201 Epitaxial-base silicon N-P-N VERSAWATT transistor. 60V, 60W. General Electric Solid State
17 BD202 Epitaxial-base silicon P-N-P VERSAWATT transistor. -60V, 60W. General Electric Solid State
18 BD203 Epitaxial-base silicon N-P-N VERSAWATT transistor. 80V, 60W. General Electric Solid State
19 BD204 Epitaxial-base silicon P-N-P VERSAWATT transistor. -80V, 60W. General Electric Solid State
20 BU208D NPN, horizontal deflection transistor with integrated damper diode. Vceo = 700Vdc, Vces = 1500Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 60W. USHA India LTD
21 BU406 NPN, horizontal deflection transistor. For horizontal deflection output stages of TV's ahd CRT's. Vceo = 200Vdc, Vcbo = 400Vdc, Vcev = 400Vdc, Veb = 6Vdc, Ieb = 7Adc, PD = 60W. USHA India LTD
22 BU406D NPN, horizontal deflection transistor. For horizontal deflection output stages of TV's and CRT's. Vceo = 200Vdc, Vcbo = 400Vdc, Vcev = 400Vdc, Veb = 6Vdc, Ic = 7Adc, PD = 60W. USHA India LTD
23 BU407 NPN, horizontal deflection transistor for horizontal deflection output stages of TV and SRT. Vceo = 150Vdc, Vcbo = 330Vdc, Vcev = 330Vdc, Veb = 6Vdc, Ic = 7Adc, PD = 60W. USHA India LTD
24 BU800 5A NPN silicon power transistor 1500V 60W with integrated damper diode Motorola
25 BUX82 5A NPN silicon power transistor 400V 60W SWITCHMODE series Motorola
26 BUX83 5A NPN silicon power transistor 450V 60W SWITCHMODE series Motorola
27 D1222UK GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 60W - 12.5V - 175MHz PUSH-PULL SemeLAB
28 DU1260T 2-175 MHz, 60W, 12V, RF MOSFET power transistor MA-Com
29 DU2860T 2-175 MHz, 60W, 28V, RF MOSFET power transistor MA-Com
30 DU2860U 2-175 MHz, 60W, 28V, RF MOSFET power transistor MA-Com


Datasheets found :: 129
Page: | 1 | 2 | 3 | 4 | 5 |



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