No. |
Part Name |
Description |
Manufacturer |
1 |
2N5346 |
7 Ampere, medium-power 60W NPN silicon transistor |
Motorola |
2 |
2N5347 |
7 Ampere, medium-power 60W NPN silicon transistor |
Motorola |
3 |
2N5348 |
7 Ampere, medium-power 60W NPN silicon transistor |
Motorola |
4 |
2N5349 |
7 Ampere, medium-power 60W NPN silicon transistor |
Motorola |
5 |
2N5477 |
7 Ampere 60W medium-power NPN silicon transistor |
Motorola |
6 |
2N5478 |
7 Ampere 60W medium-power NPN silicon transistor |
Motorola |
7 |
2N5479 |
7 Ampere 60W medium-power NPN silicon transistor |
Motorola |
8 |
2N5480 |
7 Ampere 60W medium-power NPN silicon transistor |
Motorola |
9 |
2N5643 |
V(cbo): 65V; V(ceo): 35V; V(ebo): 4V; 60W; VHF power transistor |
SGS Thomson Microelectronics |
10 |
2N6439 |
Controlled Q broadband NPN silicon RF power transistor 60W - 225-400MHz |
Motorola |
11 |
2SA1207 |
High-Voltage Switching AF 60W Predriver Applications |
SANYO |
12 |
2SB817 |
PNP Epitaxial Planar Silicon Transistors 140V/12A AF 60W Output Applications |
SANYO |
13 |
2SC2909 |
NPN Epitaxial Planar Silicon Transistors High-Voltage Switching AF 60W Predriver Applications |
SANYO |
14 |
2SD1047 |
NPN Triple Diffused Planar Silicon Transistors 140V/12A AF 60W Output Applications |
SANYO |
15 |
2SD633P |
V(cbo): 100V; V(ceo): 85V; V(ebo): 6V; 6A; 60W; epitaxial planar silicon transistor. For 85V/6A, AF 35 to 45W output applications |
SANYO |
16 |
BD201 |
Epitaxial-base silicon N-P-N VERSAWATT transistor. 60V, 60W. |
General Electric Solid State |
17 |
BD202 |
Epitaxial-base silicon P-N-P VERSAWATT transistor. -60V, 60W. |
General Electric Solid State |
18 |
BD203 |
Epitaxial-base silicon N-P-N VERSAWATT transistor. 80V, 60W. |
General Electric Solid State |
19 |
BD204 |
Epitaxial-base silicon P-N-P VERSAWATT transistor. -80V, 60W. |
General Electric Solid State |
20 |
BU208D |
NPN, horizontal deflection transistor with integrated damper diode. Vceo = 700Vdc, Vces = 1500Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 60W. |
USHA India LTD |
21 |
BU406 |
NPN, horizontal deflection transistor. For horizontal deflection output stages of TV's ahd CRT's. Vceo = 200Vdc, Vcbo = 400Vdc, Vcev = 400Vdc, Veb = 6Vdc, Ieb = 7Adc, PD = 60W. |
USHA India LTD |
22 |
BU406D |
NPN, horizontal deflection transistor. For horizontal deflection output stages of TV's and CRT's. Vceo = 200Vdc, Vcbo = 400Vdc, Vcev = 400Vdc, Veb = 6Vdc, Ic = 7Adc, PD = 60W. |
USHA India LTD |
23 |
BU407 |
NPN, horizontal deflection transistor for horizontal deflection output stages of TV and SRT. Vceo = 150Vdc, Vcbo = 330Vdc, Vcev = 330Vdc, Veb = 6Vdc, Ic = 7Adc, PD = 60W. |
USHA India LTD |
24 |
BU800 |
5A NPN silicon power transistor 1500V 60W with integrated damper diode |
Motorola |
25 |
BUX82 |
5A NPN silicon power transistor 400V 60W SWITCHMODE series |
Motorola |
26 |
BUX83 |
5A NPN silicon power transistor 450V 60W SWITCHMODE series |
Motorola |
27 |
D1222UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 60W - 12.5V - 175MHz PUSH-PULL |
SemeLAB |
28 |
DU1260T |
2-175 MHz, 60W, 12V, RF MOSFET power transistor |
MA-Com |
29 |
DU2860T |
2-175 MHz, 60W, 28V, RF MOSFET power transistor |
MA-Com |
30 |
DU2860U |
2-175 MHz, 60W, 28V, RF MOSFET power transistor |
MA-Com |
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