| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1,25AND1,0625GBD,LC,2X5,E |
Transceivers by Form-factor MSA - Mulltimode 850nm -40C to 85C |
Infineon |
| 2 |
1,25AND1,0625GBD,LC,2X5,E |
Transceivers by Form-factor MSA - Mulltimode 850nm -40C to 85C |
Infineon |
| 3 |
1.25GBIT/S,LC,SFP,3.3V |
Transceivers by Form-factor MSA - SFP - Multimode 850nm, VCSEL, 1.25GBit/s GBE, 1.0625 GBit/s FC, OC-48 Transceiver, LC |
Infineon |
| 4 |
1.5KE100CA |
1500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 85.50 V. Test current IT = 1 mA. |
Bytes |
| 5 |
15KP110A |
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/140.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 177 V @ Ipp = 85 A. |
Panjit International Inc |
| 6 |
15KP110CA |
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/140.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 177 V @ Ipp = 85 A. |
Panjit International Inc |
| 7 |
15KP85 |
Diode TVS Single Uni-Dir 85V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 8 |
15KP85A |
Diode TVS Single Uni-Dir 85V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 9 |
15KP85C |
Diode TVS Single Bi-Dir 85V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 10 |
15KP85CA |
Diode TVS Single Bi-Dir 85V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 11 |
15KPA85 |
Diode TVS Single Uni-Dir 85V 15KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 12 |
15KPA85A |
Diode TVS Single Uni-Dir 85V 15KW 2-Pin Case P600 Tape and Ammo |
New Jersey Semiconductor |
| 13 |
15KPA85C |
Diode TVS Single Bi-Dir 85V 15KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 14 |
15KPA85CA |
Diode TVS Single Bi-Dir 85V 15KW 2-Pin Case P600 Tape and Ammo |
New Jersey Semiconductor |
| 15 |
1N3464 |
Rectifier Diode 8500V 0.1A |
Motorola |
| 16 |
1N4607 |
Diode Schottky 85V 0.2A 2-Pin DO-35 |
New Jersey Semiconductor |
| 17 |
1N4608 |
Diode Schottky 85V 0.2A 2-Pin DO-35 |
New Jersey Semiconductor |
| 18 |
1N461 |
Diode Schottky 85V 0.2A 2-Pin DO-35 |
New Jersey Semiconductor |
| 19 |
1N462 |
Diode Schottky 85V 0.2A 2-Pin DO-35 |
New Jersey Semiconductor |
| 20 |
1N463 |
Diode Schottky 85V 0.2A 2-Pin DO-35 |
New Jersey Semiconductor |
| 21 |
1N464 |
Diode Schottky 85V 0.2A 2-Pin DO-35 |
New Jersey Semiconductor |
| 22 |
1N5657A |
Diode TVS Single Uni-Dir 85.5V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 23 |
1N6295A |
Diode TVS Single Uni-Dir 85.5V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 24 |
2,125AND1,0625GBD,LC,2X5 |
Transceivers by Form-factor MSA - Multimode 850nm VCSEL TRX |
Infineon |
| 25 |
2.125AND1.0625GBD,LC,SFP, |
Transceivers by Form-factor MSA - SFP - Multimode 850nm VCSEL; 2.125 and 1.0625 Gbit/s FC; 1.25 GBE TRX with LC-Connector |
Infineon |
| 26 |
2SB633 |
Epitaxial Planar Silicon Transistor 85V/6A, AF 25 to 35W Output Applications |
SANYO |
| 27 |
2SB775 |
PNP Epitaxial Planar Silicon Transistor 85V/6A, AF 35W Output Applications |
SANYO |
| 28 |
2SC2652 |
V(cbo): 85V; V(ces): 85V; V(ceo): 55V; V(ebo): 4V; 20A; 300W; silicon NPN epitaxial planar transistor. For 2-30 MHz SSB linear power amplifier applications |
TOSHIBA |
| 29 |
2SC2652 |
V(cbo): 85V; V(ces): 85V; V(ceo): 55V; V(ebo): 4V; 20A; 300W; silicon NPN epitaxial planar transistor. For 2-30 MHz SSB linear power amplifier applications |
TOSHIBA |
| 30 |
2SC4547 |
NPN Planar Silicon Darlington Transistor 85V/3A Driver Applications |
SANYO |
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