No. |
Part Name |
Description |
Manufacturer |
1 |
2N6282 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
2 |
2N6283 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
General Electric Solid State |
3 |
2N6284 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
4 |
2N6285 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
5 |
2N6286 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
General Electric Solid State |
6 |
2N6287 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
7 |
AB-046 |
OPERATIONAL AMPLIFIER MACROMODELS: A COMPARISON |
Burr Brown |
8 |
AEP15012 |
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 12 V DC. Contact arrangement: 1 form A. Contact rating: 150A. Without indicator contact. |
Matsushita Electric Works(Nais) |
9 |
AEP15024 |
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 24 V DC. Contact arrangement: 1 form A. Contact rating: 150A. Without indicator contact. |
Matsushita Electric Works(Nais) |
10 |
AEP15112 |
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 12 V DC. Contact arrangement: 1 form A. Contact rating: 150A. Indicator contact arrangement: a contact.. |
Matsushita Electric Works(Nais) |
11 |
AEP15124 |
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 24 V DC. Contact arrangement: 1 form A. Contact rating: 150A. Indicator contact arrangement: a contact.. |
Matsushita Electric Works(Nais) |
12 |
AEP15312 |
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 12 V DC. Contact arrangement: 1 form A. Contact rating: 150A. Indicator contact arrangement: b contact. |
Matsushita Electric Works(Nais) |
13 |
AEP15324 |
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 24 V DC. Contact arrangement: 1 form A. Contact rating: 150A. Indicator contact arrangement: b contact. |
Matsushita Electric Works(Nais) |
14 |
AEP16012 |
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 12 V DC. Contact arrangement: 1 form A. Contact rating: 60A. Without indicator contact. |
Matsushita Electric Works(Nais) |
15 |
AEP16024 |
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 24 V DC. Contact arrangement: 1 form A. Contact rating: 60A. Without indicator contact. |
Matsushita Electric Works(Nais) |
16 |
AEP25012 |
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 12 V DC. Contact arrangement: 2 form A. Contact rating: 150A. Without indicator contact. |
Matsushita Electric Works(Nais) |
17 |
AEP25024 |
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 24 V DC. Contact arrangement: 2 form A. Contact rating: 150A. Without indicator contact. |
Matsushita Electric Works(Nais) |
18 |
AEP25112 |
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 12 V DC. Contact arrangement: 2 form A. Contact rating: 150A. Indicator contact arrangement: a contact.. |
Matsushita Electric Works(Nais) |
19 |
AEP25124 |
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 24 V DC. Contact arrangement: 2 form A. Contact rating: 150A. Indicator contact arrangement: a contact.. |
Matsushita Electric Works(Nais) |
20 |
AEP25312 |
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 12 V DC. Contact arrangement: 2 form A. Contact rating: 150A. Indicator contact arrangement: b contact. |
Matsushita Electric Works(Nais) |
21 |
AEP25324 |
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 24 V DC. Contact arrangement: 2 form A. Contact rating: 150A. Indicator contact arrangement: b contact. |
Matsushita Electric Works(Nais) |
22 |
AN1508 |
STLC1: A COMPLETE SOLUTION FOR LED LAMP DRIVING IN MOTORCYCLE APPLICATIONS |
SGS Thomson Microelectronics |
23 |
AN920 |
ST75C520 - A COMPLETE DTMF DETECTION CHECKING FROM REVISION 1.2 TO REVISION 1.4 |
SGS Thomson Microelectronics |
24 |
AT88SC12816C |
128-Kbit User Memory with Authentication and Encryption. This is a summary document. A complete document is available under NDA. For more information, please contact your local sales office. |
Atmel |
25 |
AT88SC25616C |
256-Kbit User Memory with Authentication and Encryption. This is a summary document. A complete document is available under NDA. For more information, please contact your local sales office. |
Atmel |
26 |
AT88SC3216C |
32-Kbit User Memory with Authentication and Encryption. This is a summary document. A complete document is available under NDA. For more information, please contact your local sales office. |
Atmel |
27 |
AT88SC6416C |
64-Kbit User Memory with Authentication and Encryption. This is a summary document. A complete document is available under NDA. For more information, please contact your local sales office. |
Atmel |
28 |
AT97SC3201 |
A Fully integrated security module designed to be integrated into computer systems and other embedded systems. This is a summary document. A complete document is available under NDA. For more information, please contact your local Atmel sa |
Atmel |
29 |
ATA2516 |
The IC ATA2516 is a complete IR receiver for data communication systems. |
Atmel |
30 |
ATC18 |
The ATC18 Cell-based ASIC (CBIC) family features a comprehensive library of 0.18-micron standard logic and I/O cells designed to operate with a supply voltage of 1.8V +/- 0.15V and memory cells compiled to the precise requirements of the d |
Atmel |
| | | |