| No. |
Part Name |
Description |
Manufacturer |
| 1 |
ALX-202-027 |
CAMP DEPENDENT PROTEIN KINASE |
etc |
| 2 |
AUIRS2003S |
Automotive Grade Half Bridge Driver, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels |
International Rectifier |
| 3 |
AUIRS2003STR |
Automotive Grade Half Bridge Driver, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels |
International Rectifier |
| 4 |
BA102 |
Voltage Dependent Capacitor |
Philips |
| 5 |
IRS2003 |
Half Bridge Driver, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels |
International Rectifier |
| 6 |
IRS2003SPBF |
Half Bridge Driver, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels |
International Rectifier |
| 7 |
IRS2004 |
Half Bridge Driver, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels |
International Rectifier |
| 8 |
IRS2004SPBF |
Half Bridge Driver, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels |
International Rectifier |
| 9 |
IRS2004STRPBF |
Half Bridge Driver, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels |
International Rectifier |
| 10 |
IRS2608DSPBF |
High voltage, high speed power MOSFET and IGBT driver with dependent high side and low side referenced output channels |
International Rectifier |
| 11 |
IRS2609DSPBF |
High voltage, high speed power MOSFET and IGBT driver with dependent high side and low side referenced output channels |
International Rectifier |
| 12 |
K4R271669A-N(M)CK7 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 13 |
K4R271669A-N(M)CK8 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 14 |
K4R271669A-NB(M)CCG6 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 15 |
K4R271669AM-CG6 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. |
Samsung Electronic |
| 16 |
K4R271669AM-CK7 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
| 17 |
K4R271669AM-CK8 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. |
Samsung Electronic |
| 18 |
K4R271669AN-CG6 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq 600 MHz. |
Samsung Electronic |
| 19 |
K4R271669AN-CK7 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
| 20 |
K4R271669AN-CK8 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. |
Samsung Electronic |
| 21 |
K4R441869A-N(M)CG6 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 22 |
K4R441869A-N(M)CK7 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 23 |
K4R441869A-N(M)CK8 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 24 |
K4R441869AM-CG6 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. |
Samsung Electronic |
| 25 |
K4R441869AM-CK7 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
| 26 |
K4R441869AM-CK8 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. |
Samsung Electronic |
| 27 |
K4R441869AN-CG6 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. |
Samsung Electronic |
| 28 |
K4R441869AN-CK7 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
| 29 |
K4R441869AN-CK8 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. |
Samsung Electronic |
| 30 |
K4R881869 |
288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| | | |
