No. |
Part Name |
Description |
Manufacturer |
1 |
2SK2137 |
V(dss): 600V; V(gss): 30V; I(d): 4A; 30W; switching N-channel power MOSFET. For industrial use |
NEC |
2 |
BSS83P |
Low Voltage MOSFETs - Small Signal MOSFET. -60V, SOT-23, RDSon = 2 |
Infineon |
3 |
BUZ900P |
N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V. |
Magnatec |
4 |
BUZ901P |
N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V. |
Magnatec |
5 |
BUZ902D |
N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V. |
Magnatec |
6 |
BUZ902DP |
N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V. |
Magnatec |
7 |
BUZ903 |
N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 250V. |
Magnatec |
8 |
BUZ903D |
N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 250V. |
Magnatec |
9 |
BUZ903DP |
N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 250V. |
Magnatec |
10 |
BUZ905D |
P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -160V. |
Magnatec |
11 |
BUZ906 |
P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V. |
Magnatec |
12 |
BUZ906D |
P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V. |
Magnatec |
13 |
BUZ907D |
P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -220V. |
Magnatec |
14 |
BUZ907DP |
P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -220V. |
Magnatec |
15 |
BUZ908D |
P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -250V. |
Magnatec |
16 |
BUZ908DP |
P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -250V. |
Magnatec |
17 |
FDD8424H_F085 |
40V Dual N & P-Channel PowerTrench� MOSFET. (Transferred to alternate site. Please contact local reps for details) |
Fairchild Semiconductor |
18 |
FDP8896_F085 |
30V N-Channel PowerTrench� MOSFET. (Transferred to alternate site. Please contact local reps for details) |
Fairchild Semiconductor |
19 |
IRF520NL |
HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A |
International Rectifier |
20 |
IRF830L |
HEXFET power MOSFET. VDS = 500V, RDS(on) = 1.40 Ohm , ID = 5.0A |
International Rectifier |
21 |
IRFS3207 |
V(dss): 75V; 3.6-4.5 mOhm; 180A; HEXFET power MOSFET. For high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits |
International Rectifier |
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