No. |
Part Name |
Description |
Manufacturer |
1 |
0105-100 |
100 W, 28 V, 100-500 MHz, UHF balanced transistor |
Acrian |
2 |
0105-100-2 |
100 W, 28 V, 100-500 MHz, UHF balanced transistor |
Acrian |
3 |
0105-100-3 |
100 W, 28 V, 100-500 MHz, UHF balanced transistor |
Acrian |
4 |
0105-12 |
12 W, 28 V, 100-500 MHz, UHF balanced transistor |
Acrian |
5 |
0105-12-2 |
12 W, 28 V, 100-500 MHz, UHF balanced transistor |
Acrian |
6 |
0105-50 |
50 W, 28 V, 100-500 MHz, UHF balanced transistor |
Acrian |
7 |
0105-50-2 |
50 W, 28 V, 100-500 MHz, UHF balanced transistor |
Acrian |
8 |
0510-10 |
20 W, 28 V, 500-1000 MHz, UHF emitter silicon power transistor |
Acrian |
9 |
0510-10-2 |
20 W, 28 V, 500-1000 MHz, UHF emitter silicon power transistor |
Acrian |
10 |
148 RUS |
Aluminum Capacitors, Radial, Ultra High CV per Volume, Semi-Professional |
Vishay |
11 |
1703050306 |
Socket 370 SBC with Gigabit LAN, USB2.0, VGA/LCD and Audio |
Advantech |
12 |
1703070101 |
Socket 370 SBC with Gigabit LAN, USB2.0, VGA/LCD and Audio |
Advantech |
13 |
1703100260 |
Socket 370 SBC with Gigabit LAN, USB2.0, VGA/LCD and Audio |
Advantech |
14 |
1N4001 |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
15 |
1N4001G |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
16 |
1N4002 |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
17 |
1N4002G |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
18 |
1N4003 |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
19 |
1N4003G |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
20 |
1N4004 |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
21 |
1N4004G |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
22 |
1N4005 |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
23 |
1N4005G |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
24 |
1N4006 |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
25 |
1N4006G |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
26 |
1N4007 |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
27 |
1N4007G |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
28 |
1S1219H |
Silicon Epitaxial Planar Diode, used for High Speed Switching |
Hitachi Semiconductor |
29 |
1S1220H |
Silicon Epitaxial Planar Diode, used for High Speed Switching |
Hitachi Semiconductor |
30 |
1S1420H |
Silicon Triple Diffused Diode, used for Level Shift |
Hitachi Semiconductor |
| | | |