| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2223-1.7 |
1.7 W, 24 V, 2200-2300 MHz common base transistor |
GHz Technology |
| 2 |
3D7010-90 |
Delay 9 +/-1.7 ns, monolithic 10-TAP fixed delay line |
Data Delay Devices Inc |
| 3 |
3D7010G-90 |
Delay 9 +/-1.7 ns, monolithic 10-TAP fixed delay line |
Data Delay Devices Inc |
| 4 |
3D7010S-90 |
Delay 9 +/-1.7 ns, monolithic 10-TAP fixed delay line |
Data Delay Devices Inc |
| 5 |
AAT3221IGV-1.7-T1 |
150 mA NanopowerTM LDO Linear Regulator SOT23-5 1.7V |
Skyworks Solutions |
| 6 |
AAT3221IJS-1.7-T1 |
150 mA NanopowerTM LDO Linear Regulator SC70JW-8 1.7V |
Skyworks Solutions |
| 7 |
APW7035BKC-TR |
1.4-1.75 V,advanced PWM and linear power controller |
ANPEC Electronics Corporation |
| 8 |
APW7035BKC-TU |
1.4-1.75 V,advanced PWM and linear power controller |
ANPEC Electronics Corporation |
| 9 |
G7150-16 |
Active area: 0.45x1mm; spectral response range:0.9-1.7um; reverse voltage:5V; InGaAs PIN photodiode array: 16-element array. For near infrared (NIR) spectrophotometer |
Hamamatsu Corporation |
| 10 |
G8195-11 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
| 11 |
G8195-12 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
| 12 |
G8195-21 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
| 13 |
G8195-22 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
| 14 |
G8195-31 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
| 15 |
G8195-32 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
| 16 |
LP3991TL-1.7/NOPB |
300-mA LDO for Digital Applications 4-DSBGA |
Texas Instruments |
| 17 |
LP3991TLX-1.7/NOPB |
300-mA LDO for Digital Applications 4-DSBGA |
Texas Instruments |
| 18 |
LP3999ITL-1.7 |
1.7 V, low noise 150mA voltage regulator for RF/analog application |
National Semiconductor |
| 19 |
LP3999ITL-1.7NORB |
1.7 V, low noise 150mA voltage regulator for RF/analog application |
National Semiconductor |
| 20 |
LP3999ITLX-1.7 |
1.7 V, low noise 150mA voltage regulator for RF/analog application |
National Semiconductor |
| 21 |
LP3999ITLX-1.7NORB |
1.7 V, low noise 150mA voltage regulator for RF/analog application |
National Semiconductor |
| 22 |
MAAM12000 |
1.2-1.75 GHz, low noise GaAs MMIC amplifier |
MA-Com |
| 23 |
MAAM12000 |
Low Noise GaAs MMIC Amplifier 1.2-1.75 GHz |
Tyco Electronics |
| 24 |
MSK5275-1.7 |
1.7V, Very high current, low dropout surface mount voltage regulator |
M.S. Kennedy Corp. |
| 25 |
MSK5275-1.7E |
1.7V, Very high current, low dropout surface mount voltage regulator |
M.S. Kennedy Corp. |
| 26 |
NES1417-10B |
1.4-1.7 GHz, 10 W, L,S-band power GaAs MESFET |
NEC |
| 27 |
NES1417-20B |
1.4-1.7 GHz, 20 W, L,S-band power GaAs MESFET |
NEC |
| 28 |
PH1617-30 |
Wireless Bipolar Power Transistor, 30W 1.6-1.7 GHz |
MA-Com |
| 29 |
PT5031 |
-1.7Vout 1A +5V-Input Positive To Negative ISR |
Texas Instruments |
| 30 |
PT5031A |
-1.7Vout 1A +5V-Input Positive To Negative ISR |
Texas Instruments |
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