| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2731-100M |
Pulsed Power S-Band (Si) |
Microsemi |
| 2 |
2SA1995 |
450mW Lead frame PNP transistor, maximum rating: -50V Vceo, -100mA Ic, 120 to 560 hFE. |
Isahaya Electronics Corporation |
| 3 |
2SAR340P |
PNP -100mA -400V Middle Power Transistor |
ROHM |
| 4 |
2SAR340PT100 |
PNP -100mA -400V Middle Power Transistor |
ROHM |
| 5 |
2SAR340Q |
PNP -100mA -400V Middle Power Transistor |
ROHM |
| 6 |
2SAR340QTR |
PNP -100mA -400V Middle Power Transistor |
ROHM |
| 7 |
3134-100M |
Pulsed Power S-Band (Si) |
Microsemi |
| 8 |
3LP01M |
P-Channel Small Signal MOSFET -30V -100mA 10.4 OhmsSingle MCP |
ON Semiconductor |
| 9 |
5IMP1-0505-7 |
Input voltage range:4.5-5.5V output voltage +/-5V (+/-100mA) DC/DC converter |
Power-One |
| 10 |
ADG513TQ |
44V; 30-100mA; CMOS precision quad SPST switch. For battery-powered intruments, single supply systems, remote powered equipment, 5V supply systems |
Analog Devices |
| 11 |
BC307 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 12 |
BC308 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 13 |
BC309 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 14 |
BC556 |
Transistor. Switching and AF amplifier. High voltage. Low noise. Vcbo = -80V, Vceo= -65V, Vebo = -5V, Pc = 500mW, Ic = -100mA. |
USHA India LTD |
| 15 |
BC557 |
Transistor. Switching and AF amplifier. High voltage. Low noise. Vcbo = -50V, Vceo= -45V, Vebo = -5V, Pc = 500mW, Ic = -100mA. |
USHA India LTD |
| 16 |
BC558 |
Transistor. Switching and AF amplifier. High voltage. Low noise. Vcbo = -30V, Vceo= -30V, Vebo = -5V, Pc = 500mW, Ic = -100mA. |
USHA India LTD |
| 17 |
BC559 |
Transistor. Switching and AF amplifier. High voltage. Low noise. Vcbo = -30V, Vceo= -30V, Vebo = -5V, Pc = 500mW, Ic = -100mA. |
USHA India LTD |
| 18 |
BC560 |
Transistor. Switching and AF amplifier. High voltage. Low noise. Vcbo = -50V, Vceo= -45V, Vebo = -5V, Pc = 500mW, Ic = -100mA. |
USHA India LTD |
| 19 |
BTW94-100M |
Triac |
Mullard |
| 20 |
BYV32-100M |
HERMETICALLY SEALED DUAL FAST RECOVERY SILICON RECTIFIER FOR HI.REL APPLICATIONS |
SemeLAB |
| 21 |
CMSH1-100M |
SCHOTTKY BARRIER RECTIFIER 1.0 AMP, 20 THRU 100 VOLTS |
Central Semiconductor |
| 22 |
CMSH2-100M |
HIGH DENSITY SCHOTTKY BARRIER RECTIFIER 2.0 AMP, 20 THRU 100 VOLTS |
Central Semiconductor |
| 23 |
CMSH3-100M |
HIGH DENSITY SCHOTTKY BARRIER RECTIFIER 3.0 AMP, 20 THRU 100 VOLTS |
Central Semiconductor |
| 24 |
CMSH3-100MA |
SMD Schottky Rectifier Single |
Central Semiconductor |
| 25 |
DDU11H-100M |
5-TAP, ECL-interfaced fixed delay line |
Data Delay Devices Inc |
| 26 |
DDU11H-100MC3 |
5-TAP, ECL-interfaced fixed delay line |
Data Delay Devices Inc |
| 27 |
DDU12H-100M |
5-TAP, ECL-interfaced fixed delay line |
Data Delay Devices Inc |
| 28 |
DDU12H-100MC3 |
5-TAP, ECL-interfaced fixed delay line |
Data Delay Devices Inc |
| 29 |
DDU18-100M |
8-TAP, ECL-interfaced fixed delay line |
Data Delay Devices Inc |
| 30 |
DDU18-100MC3 |
8-TAP, ECL-interfaced fixed delay line |
Data Delay Devices Inc |
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