| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AP1509-3.3V |
150KHz, 2A PWM Buck DC/DC Converter |
Anachip |
| 2 |
AS1117M1-3.3V |
800mA low dropout regulator 3,3V |
ALPHA Semiconductor |
| 3 |
AS1117M3-3.3V |
800mA low dropout regulator 3,3V |
ALPHA Semiconductor |
| 4 |
AS1117R-3.3V |
800mA low dropout regulator 3,3V |
ALPHA Semiconductor |
| 5 |
AS1117S-3.3V |
800mA low dropout regulator 3,3V |
ALPHA Semiconductor |
| 6 |
AS1117T-3.3V |
800mA low dropout regulator 3,3V |
ALPHA Semiconductor |
| 7 |
AS1117U-3.3V |
800mA low dropout regulator 3,3V |
ALPHA Semiconductor |
| 8 |
AT77C105A |
FingerChip Thermal Fingerprint Sweep Sensor, Hardware Based Navigation and Click Functions, Extended I/O range(1.8-3.3V) |
Atmel |
| 9 |
AT77C105ACB08V |
-FingerChip Thermal Fingerprint Sweep Sensor, Hardware Based Navigation and Click Functions, Extended I/O range(1.8-3.3V) |
Atmel |
| 10 |
AT77C105ACB08V |
FingerChip Thermal Fingerprint Sweep Sensor, Hardware Based Navigation and Click Functions, Extended I/O range(1.8-3.3V) |
Atmel |
| 11 |
HYB3116400BJBTL-50 |
-3.3V 4M x 4-Bit Dynamic RAM |
Siemens |
| 12 |
HYB3116405BJBTL-50 |
-3.3V 4M x 4-Bit EDO-Dynamic RAM |
Siemens |
| 13 |
HYB3116405BJBTL-50 |
-3.3V 4M x 4-Bit EDO-Dynamic RAM |
Siemens |
| 14 |
HYB314171BJ-50 |
-3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
Siemens |
| 15 |
HYB314171BJ-50 |
-3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
Siemens |
| 16 |
HYB314175BJ-50 |
-3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
| 17 |
HYB314175BJ-50 |
-3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
| 18 |
IC61SF25632D-6.5B |
6.5ns; 2.5-3.3V; 256K x 32; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 19 |
IC61SF25632D-6.5BI |
6.5ns; 2.5-3.3V; 256K x 32; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 20 |
IC61SF25632D-6.5TQ |
6.5ns; 2.5-3.3V; 256K x 32; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 21 |
IC61SF25632D-6.5TQI |
6.5ns; 2.5-3.3V; 256K x 32; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 22 |
IC61SF25632D-7.5B |
7.5ns; 2.5-3.3V; 256K x 32; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 23 |
IC61SF25632D-7.5BI |
7.5ns; 2.5-3.3V; 256K x 32; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 24 |
IC61SF25632D-7.5TQ |
7.5ns; 2.5-3.3V; 256K x 32; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 25 |
IC61SF25632D-7.5TQI |
7.5ns; 2.5-3.3V; 256K x 32; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 26 |
IC61SF25632D-8.5B |
8.5ns; 2.5-3.3V; 256K x 32; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 27 |
IC61SF25632D-8.5BI |
8.5ns; 2.5-3.3V; 256K x 32; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 28 |
IC61SF25632D-8.5TQ |
8.5ns; 2.5-3.3V; 256K x 32; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 29 |
IC61SF25632D-8.5TQI |
8.5ns; 2.5-3.3V; 256K x 32; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 30 |
IC61SF25632D-9.5B |
9.5ns; 2.5-3.3V; 256K x 32; 8Mb SYNCBURST flow through static RAM |
ICSI |
| | | |
