| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1S2076A |
Silicon Epitaxial Planar Diode, intended for use in Various Detector, Modulator, Demodulator VR(peak)=-70V, VR=-60V |
Hitachi Semiconductor |
| 2 |
2N3791 |
Silicon P-N-P epitaxial-base high power transistor. -60V, 150W. |
General Electric Solid State |
| 3 |
2N6108 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
| 4 |
2N6109 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
| 5 |
2N6125 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
| 6 |
2SA2071P5 |
-60V 3A Power Transistor |
ROHM |
| 7 |
2SA2071P5T100Q |
-60V 3A Power Transistor |
ROHM |
| 8 |
2SA537 |
Silicon PNP Epitaxial Planar Transistor Vcbo=-60V, Vceo=-50V, intended for use in HiFi Amp. Driver, Power Output |
Hitachi Semiconductor |
| 9 |
2SA539 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 400mW. |
USHA India LTD |
| 10 |
2SA733 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW. |
USHA India LTD |
| 11 |
2SB1116 |
Audio frequency power amplifier medium speed switching. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -6V. Collector dissipation: Pc(max) = 0,75W. |
USHA India LTD |
| 12 |
2SB1116A |
Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = -80V. Collector-emitter voltage Vceo = -60V. Emitter-base voltage Vebo = -6V. Collector dissipation Pc(max) = 0,75W. |
USHA India LTD |
| 13 |
2SB1185 |
Power Transistor (-60V/ -3A) |
ROHM |
| 14 |
2SB1314 |
2W Lead frame PNP transistor, maximum rating: -60V Vceo, -3A Ic, 150 to 500 hFE. |
Isahaya Electronics Corporation |
| 15 |
2SB1370 |
Power Transistor (-60V/ -3A) |
ROHM |
| 16 |
2SB1565 |
Power Transistor (-60V/ -3A) |
ROHM |
| 17 |
2SB1639 |
High-current gain Power Transistor (-60V/ -3A) |
ROHM |
| 18 |
2SB1655 |
Power Transistor (-60V/ -3A) |
ROHM |
| 19 |
2SD1944 |
High-current gain Power Transistor (-60V/ -3A) |
ROHM |
| 20 |
2SJ358-T1 |
P-channel MOS FET (-60V, +-3A) |
NEC |
| 21 |
2SJ358-T2 |
P-channel MOS FET (-60V, +-3A) |
NEC |
| 22 |
2SJ652 |
P-Channel Power MOSFET, -60V, -28A, 38mOhm, TO-220F-3SG |
ON Semiconductor |
| 23 |
AN5539 |
30-60V; 9W; bipolar monolithic vertical deflection output IC For use in televisions, monitors and displays |
Panasonic |
| 24 |
ATP114 |
P-Channel Power MOSFET, -60V, -55A, 16mOhm, Single ATPAK |
ON Semiconductor |
| 25 |
ATP302 |
P-Channel Power MOSFET, -60V, -70A, 13mOhm, ATPAK |
ON Semiconductor |
| 26 |
BBS3002 |
P-Channel Power MOSFET -60V, -100A, 5.8mOhm, TO-263-2L/TO-263 |
ON Semiconductor |
| 27 |
BC638 |
Transistor. Switching and amplifier applications. Vcer = -60V, Vces = -60V, Vceo = -60V, Vebo = -5V, Pc = 1W, Ic = -1A. |
USHA India LTD |
| 28 |
BC638 |
Transistor. Switching and amplifier applications. Vcer = -60V, Vces = -60V, Vceo = -60V, Vebo = -5V, Pc = 1W, Ic = -1A. |
USHA India LTD |
| 29 |
BC638 |
Transistor. Switching and amplifier applications. Vcer = -60V, Vces = -60V, Vceo = -60V, Vebo = -5V, Pc = 1W, Ic = -1A. |
USHA India LTD |
| 30 |
BD202 |
Epitaxial-base silicon P-N-P VERSAWATT transistor. -60V, 60W. |
General Electric Solid State |
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