No. |
Part Name |
Description |
Manufacturer |
1 |
0032 |
HIGH SPEED, FET INPUT DIFFERENTIAL OP-AMP |
M.S. Kennedy Corp. |
2 |
2576 |
5-AmpAdjustableRegulators |
National Semiconductor |
3 |
2N2913 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
4 |
2N2914 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
5 |
2N2915 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
6 |
2N2916 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
7 |
2N2917 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
8 |
2N2918 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
9 |
2N2919 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
10 |
2N2920 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
11 |
2N2972 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
12 |
2N2973 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
13 |
2N2974 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
14 |
2N2975 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
15 |
2N2976 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
16 |
2N2977 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
17 |
2N2978 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
18 |
2N2979 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
19 |
2N3924 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
20 |
2N3925 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
21 |
2N3926 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
22 |
2N3927 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
23 |
2N5179 |
Epitaxial planar NPN transistor intended for low-noise tuned-amplifier and converter applications up to 500MHz |
SGS-ATES |
24 |
2SC9014 |
PRE-AMPLIFIER, LOW LEVEL & LOW NOISE |
USHA India LTD |
25 |
2SK30 |
N CHANNEL JUNCTION TYPE (LOW NOISE PRE-AMPLIFIER/ TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS) |
TOSHIBA |
26 |
2SK30ATM |
Field Effect Transistor Silicon N Channel Junction Type Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications |
TOSHIBA |
27 |
3SK20H |
Silicon N-CHANNEL MOS Type FET Transistor, High Input Impedance Pre-Amplifier |
Hitachi Semiconductor |
28 |
3SK28 |
Silicon N-Channel junction Field Effect Transistor, Video pre-amplifier or VHF band amplifier applications |
TOSHIBA |
29 |
52149 |
NEGATIVE ADJUSTABLE 5-AMP VOLTAGE REGULATOR |
Micropac Industries |
30 |
52150 |
POSITIVE ADJUSTABLE 5-AMP VOLTAGE REGULATOR |
Micropac Industries |
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