No. |
Part Name |
Description |
Manufacturer |
1 |
1N596 |
Silicon Rectifier Diode 600V 0.125A |
Motorola |
2 |
1N597 |
Silicon Rectifier Diode 800V 0.125A |
Motorola |
3 |
1N598 |
Silicon Rectifier Diode 1000V 0.125A |
Motorola |
4 |
1N942B |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.120V |
Motorola |
5 |
2SK1277 |
N-Channel MOS-FET(250V, 0.12Ohm, 30A, 150W) |
Fuji Electric |
6 |
7208 |
T-1 subminiature, wire lead lamp. 3.0 volts, 0.120 amps. |
Gilway Technical Lamp |
7 |
7216 |
T-1 subminiature, wire lead lamp. 5.0 volts, 0.125 amps. |
Gilway Technical Lamp |
8 |
7232 |
T-1 subminiature, miniature flanged lamp. 3.0 volts, 0.120 amps. |
Gilway Technical Lamp |
9 |
7239 |
T-1 subminiature, miniature flanged lamp. 5.0 volts, 0.125 amps. |
Gilway Technical Lamp |
10 |
7261 |
T-1 subminiature, bi-pin lamp. 3.0 volts, 0.120 amps. |
Gilway Technical Lamp |
11 |
7268 |
T-1 subminiature, bi-pin lamp. 5.0 volts, 0.125 amps. |
Gilway Technical Lamp |
12 |
7315 |
T-1 3/4 subminiature, midget screw lamp. 4.5 volts, 0.120 amps. |
Gilway Technical Lamp |
13 |
7331 |
T-1 3/4 subminiature, miniature flanged lamp. 4.5 volts, 0.120 amps. |
Gilway Technical Lamp |
14 |
7345 |
T-1 3/4 subminiature, miniature grooved lamp. 4.5 volts, 0.120 amps. |
Gilway Technical Lamp |
15 |
7359 |
T-1 3/4 subminiature, bi-pin lamp. 4.5 volts, 0.120 amps. |
Gilway Technical Lamp |
16 |
AGM3224W-MC-FBD-T |
0.3-7.0V; number of dots: 320 x 240dots; dot size:0.09 x 0.33mm; dot pitch:0.12 x 0.36mm; AZ display |
AZ Displays |
17 |
AGM3224W-MC-FBS-T |
0.3-7.0V; number of dots: 320 x 240dots; dot size:0.09 x 0.33mm; dot pitch:0.12 x 0.36mm; AZ display |
AZ Displays |
18 |
AGM3224W-NC-FBD-T |
0.3-7.0V; number of dots: 320 x 240dots; dot size:0.09 x 0.33mm; dot pitch:0.12 x 0.36mm; AZ display |
AZ Displays |
19 |
AGM3224W-NC-FBS-T |
0.3-7.0V; number of dots: 320 x 240dots; dot size:0.09 x 0.33mm; dot pitch:0.12 x 0.36mm; AZ display |
AZ Displays |
20 |
APL501J |
POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 500V 43.0A 0.12Ohm |
Advanced Power Technology |
21 |
APL501P |
POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 500V 43.0A 0.12 OHM |
Advanced Power Technology |
22 |
APT4012BVR |
POWER MOS V 400V 37A 0.120 Ohm |
Advanced Power Technology |
23 |
APT5010JN |
POWER MOS IV 500V 48.0A 0.10 Ohm / 500V 43.0A 0.12 Ohm |
Advanced Power Technology |
24 |
APT5012JN |
POWER MOS IV 500V 48.0A 0.10 Ohm / 500V 43.0A 0.12 Ohm |
Advanced Power Technology |
25 |
APT5012WVR |
POWER MOS V 500V 40A 0.120 Ohm |
Advanced Power Technology |
26 |
BFQ540 |
Trans GP BJT NPN 15V 0.12A 4-Pin(3+Tab) SOT-89 |
New Jersey Semiconductor |
27 |
BFS540 |
Trans GP BJT NPN 15V 0.12A 3-Pin SC-70 |
New Jersey Semiconductor |
28 |
BSO612CV |
Low Voltage MOSFETs - SIPMOS, Complementary, 60V, SO-8, RDSon(N/P) = 0.12/0.30Ohm, Id(N) = 3.1A, Id(P) = -2.0A, NL |
Infineon |
29 |
BUZ350 |
Low Voltage MOSFETs - Power MOSFET, 200V, TO-220, RDSon=0.12 Ohm, 22A, NL |
Infineon |
30 |
BUZ71A |
13A, 50V, 0.120 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
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