| No. |
Part Name |
Description |
Manufacturer |
| 1 |
APT6015JN |
POWER MOS IV 600V 38.0A 0.15 Ohm / 600V 35.0A 0.18 Ohm |
Advanced Power Technology |
| 2 |
APT6018JN |
POWER MOS IV 600V 38.0A 0.15 Ohm / 600V 35.0A 0.18 Ohm |
Advanced Power Technology |
| 3 |
MTD3055E |
TMOS power FET. 60 V, 8 A, Rds(on) 0.15 Ohm. |
Motorola |
| 4 |
MTD3055E1 |
TMOS power FET. 60 V, 8 A, Rds(on) 0.15 Ohm. |
Motorola |
| 5 |
MTD3055V |
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM |
Motorola |
| 6 |
MTP3055 |
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM |
Motorola |
| 7 |
MTP3055E |
N-channel TMOS power FET. 60 V, 12 A, Rds(on) 0.15 Ohm. |
Motorola |
| 8 |
MTP3055V |
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM |
Motorola |
| 9 |
MTY30N50 |
TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM |
Motorola |
| 10 |
MTY30N50E |
TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM |
Motorola |
| 11 |
SSR3055A |
BV(dss): 60V; R(ds-on): 0.15 Ohm; I(d): 8 A; advanced power MOSFET |
Samsung Electronic |
| 12 |
STB19NF20 |
N-channel 200 V, 0.15 Ohm typ., 15 A MESH OVERLAY(TM) Power MOSFET in D2PAK package |
ST Microelectronics |
| 13 |
STF19NF20 |
N-channel 200 V, 0.15 Ohm typ., 15 A MESH OVERLAY(TM) Power MOSFET in TO-220FP package |
ST Microelectronics |
| 14 |
STP19NF20 |
N-channel 200 V, 0.15 Ohm typ., 15 A MESH OVERLAY(TM) Power MOSFET in TO-220 package |
ST Microelectronics |
| 15 |
U3055A |
BV(dss): 60V; R(ds-on): 0.15 Ohm; I(d): 8 A; advanced power MOSFET |
Samsung Electronic |
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