| No. |
Part Name |
Description |
Manufacturer |
| 1 |
15KP180A |
Glass passivated junction transient voltage suppressor. Vrwm = 180 V. Vbr(min/max) = 198/230.4 V @ It = 1.0 mA. Ir = 5 uA. Vc = 292 V @ Ipp = 51 A. |
Panjit International Inc |
| 2 |
15KP180CA |
Glass passivated junction transient voltage suppressor. Vrwm = 180 V. Vbr(min/max) = 198/230.4 V @ It = 1.0 mA. Ir = 5 uA. Vc = 292 V @ Ipp = 51 A. |
Panjit International Inc |
| 3 |
161X |
Unbased lamp. 3.5V, 0.450A. |
Gilway Technical Lamp |
| 4 |
1N1008 |
Silicon Rectifier Diode 380V 0.4A |
Motorola |
| 5 |
1N1016 |
Germanium Rectifier Diode 380V 0.4A |
Motorola |
| 6 |
1N1024 |
Germanium Rectifier Diode 380V 0.4A |
Motorola |
| 7 |
1N2163 |
Temperature-Compesated Zener Refference Diode 9.4V ±0.4V |
Motorola |
| 8 |
1N2164 |
Temperature-Compesated Zener Refference Diode 9.4V ±0.4V |
Motorola |
| 9 |
1N2165 |
Temperature-Compesated Zener Refference Diode 9.4V ±0.4V |
Motorola |
| 10 |
1N2166 |
Temperature-Compesated Zener Refference Diode 9.4V ±0.4V |
Motorola |
| 11 |
1N2167 |
Temperature-Compesated Zener Refference Diode 9.4V ±0.4V |
Motorola |
| 12 |
1N2168 |
Temperature-Compesated Zener Refference Diode 9.4V ±0.4V |
Motorola |
| 13 |
1N2169 |
Temperature-Compesated Zener Refference Diode 9.4V ±0.4V |
Motorola |
| 14 |
1N2170 |
Temperature-Compesated Zener Refference Diode 9.4V ±0.4V |
Motorola |
| 15 |
1N2171 |
Temperature-Compesated Zener Refference Diode 9.4V ±0.4V |
Motorola |
| 16 |
1N4150-1 |
Diode Switching 75V 0.4A 2-Pin DO-35 |
New Jersey Semiconductor |
| 17 |
1N4370 |
Zener Diode 2.4V 0.4W |
Motorola |
| 18 |
1N4370A |
Zener Diode 2.4V 0.4W |
Motorola |
| 19 |
1N4371 |
Zener Diode 2.7V 0.4W |
Motorola |
| 20 |
1N4371A |
Zener Diode 2.7V 0.4W |
Motorola |
| 21 |
1N4372 |
Zener Diode 3.0V 0.4W |
Motorola |
| 22 |
1N4372A |
Zener Diode 3.0V 0.4W |
Motorola |
| 23 |
1N461A |
Diode 25V 0.4A 2-Pin DO-7 |
New Jersey Semiconductor |
| 24 |
1N463A |
Diode 175V 0.4A 2-Pin DO-7 |
New Jersey Semiconductor |
| 25 |
1N464A |
Diode 125V 0.4A 2-Pin DO-7 |
New Jersey Semiconductor |
| 26 |
1N5518 |
0.4W LOW VOLTAGE AVALANCHE DIODES |
Jinan Gude Electronic Device |
| 27 |
1N5518A |
0.4W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 28 |
1N5518B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 29 |
1N5518C |
0.4W LOW VOLTAGE AVALANCHE DIODES |
Jinan Gude Electronic Device |
| 30 |
1N5518D |
0.4 W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-1% tolerance. |
Jinan Gude Electronic Device |
| | | |
