| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N4768 |
Low-level temperature-compensated zener reference diode. Max voltage 0.007 V. |
Motorola |
| 2 |
1N4769A |
Low-level temperature-compensated zener reference diode. Max voltage 0.007 V. |
Motorola |
| 3 |
1N4773 |
Low-level temperature-compensated zener reference diode. Max voltage 0.007 V. |
Motorola |
| 4 |
1N4774A |
Low-level temperature-compensated zener reference diode. Max voltage 0.007 V. |
Motorola |
| 5 |
1N4779A |
Low-level temperature-compensated zener reference diode. Max voltage 0.007 V. |
Motorola |
| 6 |
1N4784A |
Low-level temperature-compensated zener reference diode. Max voltage 0.007 V. |
Motorola |
| 7 |
2C3866A |
Chip Type 2C3866A Geometry 1007 Polarity NPN |
Semicoa Semiconductor |
| 8 |
2C5109 |
Chip Type 2C5109 Geometry 1007 Polarity NPN |
Semicoa Semiconductor |
| 9 |
2N3866 |
Chip Type 2C3866A Geometry 1007 Polarity NPN |
Semicoa Semiconductor |
| 10 |
2N3866A |
Chip Type 2C3866A Geometry 1007 Polarity NPN |
Semicoa Semiconductor |
| 11 |
2N3866AUB |
Chip Type 2C3866A Geometry 1007 Polarity NPN |
Semicoa Semiconductor |
| 12 |
2N5109 |
Chip Type 2C5109 Geometry 1007 Polarity NPN |
Semicoa Semiconductor |
| 13 |
2N5109UB |
Chip Type 2C5109 Geometry 1007 Polarity NPN |
Semicoa Semiconductor |
| 14 |
APT10M07JVR |
POWER MOS V 100V 225A 0.007 Ohm |
Advanced Power Technology |
| 15 |
DS8007-KIT |
DS8007 EMV Evaluation Kit |
MAXIM - Dallas Semiconductor |
| 16 |
DSP56007DS |
DSP56007 24-Bit Digital Signal Processor Data Sheet |
Motorola |
| 17 |
EGS/W/N |
Military/Established Reliability, MIL-R-39007 Qual., Type RWR, R Level, Meets Solvent Resistance of MIL-STD-202 (Method 215), 100% Power Stabilization and Screening Test |
Vishay |
| 18 |
ESS/W/N |
Military/Established Reliability, MIL-R-39007 Qual., Type RWR, R Level, Meets Solvent Resistance of MIL-STD-202 (Method 215), 100% Power Stabilization and Screening Test |
Vishay |
| 19 |
GO7007 |
WIS GO7007 Single-Chip Streaming Media Encoder |
etc |
| 20 |
HSDL-3000 |
HSDL-3000#007 · IrDA 1.3 Data Compliant 115.2kb/s 3-5V Transceiver, Front Option |
Agilent (Hewlett-Packard) |
| 21 |
HSDL-3002-007 |
HSDL-3002-007 · IrDA Data Compliant 115.2Kb/s with Remote Control Transmission Infrared Transceiver |
Agilent (Hewlett-Packard) |
| 22 |
HSDL-3602-007 |
HSDL-3602-007 · IrDA 1.1 Data Compliant 4Mb/s 3V Infrared Transceiver |
Agilent (Hewlett-Packard) |
| 23 |
HSDL-3603-007 |
HSDL-3603-007 · IrDA 1.4 Data Compliant 4Mb/s 3-5V Infrared Transceiver (Not Recommended for New Designs) |
Agilent (Hewlett-Packard) |
| 24 |
HSDL-3612-007 |
HSDL-3612-007 · IrDA 1.0 Data Compliant 115.2Kb/s 3-5V Infrared Transceiver |
Agilent (Hewlett-Packard) |
| 25 |
HUF75345G3 |
75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs |
Fairchild Semiconductor |
| 26 |
HUF75345G3 |
75A/ 55V/ 0.007 Ohm/ N-Channel UltraFET Power MOSFETs |
Intersil |
| 27 |
HUF75345P3 |
75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs |
Fairchild Semiconductor |
| 28 |
HUF75345P3 |
75A/ 55V/ 0.007 Ohm/ N-Channel UltraFET Power MOSFETs |
Intersil |
| 29 |
HUF75345P3_NL |
75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs |
Fairchild Semiconductor |
| 30 |
HUF75345S3 |
75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs |
Fairchild Semiconductor |
| | | |
