| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2RI100E-060 |
POWER DIODE MODULE |
Fuji Electric |
| 2 |
2RI100E-060_080 |
POWER DIODE MODULE |
Fuji Electric |
| 3 |
2RI100E-080 |
POWER DIODE MODULE |
Fuji Electric |
| 4 |
6RI100E-060 |
POWER DIODE MODULE |
Fuji Electric |
| 5 |
6RI100E-060_080 |
Power diode module |
COLLMER SEMICONDUCTOR INC |
| 6 |
6RI100E-080 |
POWER DIODE MODULE |
Fuji Electric |
| 7 |
BT136-600E-0 |
Thyristor TRIAC 600V 27A 3-Pin(3+Tab) TO-220AB Tube |
New Jersey Semiconductor |
| 8 |
K3N5C1000E-D(G)C,TC |
16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM Data Sheet |
Samsung Electronic |
| 9 |
K3N5C1000E-D(G)C,TC |
16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM Data Sheet |
Samsung Electronic |
| 10 |
K3N5V(U)1000E-D(G)C,TC |
16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM Data Sheet |
Samsung Electronic |
| 11 |
K3N5V(U)1000E-D(G)C,TC |
16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM Data Sheet |
Samsung Electronic |
| 12 |
K3N6C1000E-GC,TC,YC |
32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM Data Sheet |
Samsung Electronic |
| 13 |
K3N6C3000E-DC |
32M-Bit (4Mx8) CMOS MASK ROM Data Sheet |
Samsung Electronic |
| 14 |
K3N6C4000E-DC |
32M-Bit (2Mx16) CMOS MASK ROM Data Sheet |
Samsung Electronic |
| 15 |
K3N6V(U)1000E-GC/TC/YC |
32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM Data Sheet |
Samsung Electronic |
| 16 |
K3N6V(U)1000E-GC/TC/YC |
32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM Data Sheet |
Samsung Electronic |
| 17 |
K3N6V(U)1000E-GC/TC/YC |
32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM Data Sheet |
Samsung Electronic |
| 18 |
K3N6V(U)4000E-DC |
32M-Bit (2Mx16) CMOS MASK ROM Data Sheet |
Samsung Electronic |
| 19 |
MAX66000E-000AA+ |
ISO/IEC 14443 Type B-Compliant 64-Bit UID |
MAXIM - Dallas Semiconductor |
| 20 |
MAX66100E-000AA+ |
ISO 15693-Compliant 64-Bit UID |
MAXIM - Dallas Semiconductor |
| 21 |
MSM514400E-60SJ |
1,048,576-word x 4-bit dynamic RAM |
OKI electronic components |
| 22 |
MSM514400E-60TS-K |
1,048,576-word x 4-bit dynamic RAM |
OKI electronic components |
| 23 |
MSM514400E-70SJ |
1,048,576-word x 4-bit dynamic RAM |
OKI electronic components |
| 24 |
MSM514400E-70TS-K |
1,048,576-word x 4-bit dynamic RAM |
OKI electronic components |
| 25 |
MSM514800E-60JS |
524,288-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE |
OKI electronic componets |
| 26 |
MSM514800E-70JS |
524,288-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE |
OKI electronic componets |
| 27 |
MSM56V16800E-10TS-K |
2-bank x 1,048,576-word x 8-bit cynchronous dynamic RAM |
OKI electronic components |
| 28 |
MSM56V16800E-8TS-K |
2-bank x 1,048,576-word x 8-bit cynchronous dynamic RAM |
OKI electronic components |
| 29 |
MTB3N100E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 30 |
MTP1N100E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement - Mode Silicon Gate |
ON Semiconductor |
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