| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N110 |
Germanium Diode Microwave Mixer - to 1,000MHz, NF=10dB |
Motorola |
| 2 |
1N5149 |
Silicon high-frequency step-recovery power varactor for 100MHz to 2.0 GHz harmonic-generation applications, output power to 25W al 1GHz |
Motorola |
| 3 |
1N5150 |
Silicon high-frequency step-recovery power varactor for 100MHz to 2.0 GHz harmonic-generation applications, output power to 25W al 1GHz |
Motorola |
| 4 |
2N2857 |
Epitaxial planar NPN transistor intended for amplifier, oscillator and converter applications up to 500MHz |
SGS-ATES |
| 5 |
2N2947 |
NPN silicon annular transistor for power amplifier applications to 100MHz |
Motorola |
| 6 |
2N2948 |
NPN silicon annular transistor for power amplifier applications to 100MHz |
Motorola |
| 7 |
2N2949 |
NPN silicon annular transistors for power amplifier and driver applications to 100MHz, TO-107 case |
Motorola |
| 8 |
2N2950 |
NPN silicon annular transistors for power amplifier and driver applications to 100MHz, TO-102 case |
Motorola |
| 9 |
2N3375 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
| 10 |
2N3553 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
| 11 |
2N3632 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
| 12 |
2N3664 |
NPN silicon transistor for power amplifier and driver applications to 500MHz |
Motorola |
| 13 |
2N3839 |
Epitaxial planar NPN transistor intended for amplifier, oscillator and converter applications up to 500MHz, low noise |
SGS-ATES |
| 14 |
2N3866 |
NPN silicon high frequency transistor 1.0W - 400MHz |
Motorola |
| 15 |
2N3866A |
NPN silicon high frequency transistor 1.0W - 400MHz |
Motorola |
| 16 |
2N3904-T18 |
40V Vce, 0.2A Ic, 300MHz NPN bipolar transistor |
SemeLAB |
| 17 |
2N3948 |
NPN silicon high frequency transistor 1.0W - 400MHz |
Motorola |
| 18 |
2N3961 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
| 19 |
2N4428 |
NPN silicon RF power transistor 0.75W - 500MHz |
Motorola |
| 20 |
2N5179 |
NPN silicon RF high frequency transistor 4.5dB - 200MHz |
Motorola |
| 21 |
2N5179 |
Epitaxial planar NPN transistor intended for low-noise tuned-amplifier and converter applications up to 500MHz |
SGS-ATES |
| 22 |
2N6439 |
Controlled Q broadband NPN silicon RF power transistor 60W - 225-400MHz |
Motorola |
| 23 |
2SA495 |
Silicon PNP epitaxial planar transistor for General Amplifier Applications fT=200MHz, complementary to 2SC372 |
TOSHIBA |
| 24 |
2SC1120 |
Silicon NPN epitaxial planar transistor 400MHz Land-Mobil Radio RF power amplifier applications (low supply voltage use) |
TOSHIBA |
| 25 |
2SC1121 |
Silicon NPN epitaxial planar transistor 400MHz Land-Mobil Radio RF power amplifier applications (low supply voltage use) |
TOSHIBA |
| 26 |
2SC1122A |
Silicon NPN epitaxial planar transistor 400MHz Land-Mobil Radio Output Stage applications (low supply voltage use) |
TOSHIBA |
| 27 |
2SC1196 |
Silicon NPN epitaxial planar transistor, 700MHz- Power amplifier applications |
TOSHIBA |
| 28 |
2SC1197 |
Silicon NPN epitaxial planar transistor, 700MHz-Power amplifier applications |
TOSHIBA |
| 29 |
2SC1198 |
Silicon NPN epitaxial planar transistor, 700MHz-Power amplifier applications |
TOSHIBA |
| 30 |
2SC1241 |
Silicon NPN epitaxial planar RF transistor, fT=400MHz |
TOSHIBA |
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