| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N3157 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.013 V. 500 W. |
Motorola |
| 2 |
1N4777 |
Low-level temperature-compensated zener reference diode. Max voltage 0.013 V. |
Motorola |
| 3 |
1N4778A |
Low-level temperature-compensated zener reference diode. Max voltage 0.013 V. |
Motorola |
| 4 |
1N4782 |
Low-level temperature-compensated zener reference diode. Max voltage 0.013 V. |
Motorola |
| 5 |
1N4783A |
Low-level temperature-compensated zener reference diode. Max voltage 0.013 V. |
Motorola |
| 6 |
2C918 |
Chip Type 2C918 Geometry 0013 Polarity NPN |
Semicoa Semiconductor |
| 7 |
2N918 |
Chip Type 2C918 Geometry 0013 Polarity NPN |
Semicoa Semiconductor |
| 8 |
2N918UB |
Chip Type 2C918 Geometry 0013 Polarity NPN |
Semicoa Semiconductor |
| 9 |
769D (CECC 30202-013) |
Wet Tantalum Capacitors with Epoxy End-Fill, Sintered Anode, TANTALEX® Capacitors CECC 30202-013 Approved |
Vishay |
| 10 |
769D306X0006A0 |
Wet Tantalum Capacitors with Epoxy End-Fill, Sintered Anode, TANTALEX Capacitors CECC 30202-013 Approved |
Vishay |
| 11 |
769D306X0006A2 |
Wet Tantalum Capacitors with Epoxy End-Fill, Sintered Anode, TANTALEX Capacitors CECC 30202-013 Approved |
Vishay |
| 12 |
769D306X5006A0 |
Wet Tantalum Capacitors with Epoxy End-Fill, Sintered Anode, TANTALEX Capacitors CECC 30202-013 Approved |
Vishay |
| 13 |
769D306X5006A2 |
Wet Tantalum Capacitors with Epoxy End-Fill, Sintered Anode, TANTALEX Capacitors CECC 30202-013 Approved |
Vishay |
| 14 |
769D306X9006A0 |
Wet Tantalum Capacitors with Epoxy End-Fill, Sintered Anode, TANTALEX Capacitors CECC 30202-013 Approved |
Vishay |
| 15 |
769D306X9006A2 |
Wet Tantalum Capacitors with Epoxy End-Fill, Sintered Anode, TANTALEX Capacitors CECC 30202-013 Approved |
Vishay |
| 16 |
AN1090 |
STA013 MPEG 2.5 LAYER III (MP3) SOURCE DECODER |
SGS Thomson Microelectronics |
| 17 |
APT20M13PVR |
POWER MOS V 200V 146A 0.013 Ohm |
Advanced Power Technology |
| 18 |
EVB3013A |
W3013 Indirect Quadrature Modulator with Gain Control |
Agere Systems |
| 19 |
HUF76131SK8 |
10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
Fairchild Semiconductor |
| 20 |
HUF76131SK8 |
10A/ 30V/ 0.013 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET |
Intersil |
| 21 |
HUF76131SK8T |
10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
Fairchild Semiconductor |
| 22 |
IDCS-7328 |
High Current, Drum Core Inductor |
Vishay |
| 23 |
NX8560SJ610-BC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1561.013 nm. Frequency 192.05 THz. FC-UPC connector. |
NEC |
| 24 |
NX8560SJ610-CC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1561.013 nm. Frequency 192.05 THz. SC-UPC connector. |
NEC |
| 25 |
NX8567SA610-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1561.013 nm. Frequency 192.05 THz. FC-UPC connector. |
NEC |
| 26 |
NX8567SA610-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1561.013 nm. Frequency 192.05 THz. SC-UPC connector. |
NEC |
| 27 |
NX8567SAM610-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1561.013 nm. Frequency 192.05 THz. FC-UPC connector. |
NEC |
| 28 |
NX8567SAM610-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1561.013 nm. Frequency 192.05 THz. SC-UPC connector. |
NEC |
| 29 |
NX8567SAS610-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1561.013 nm. Frequency 192.05 THz. FC-UPC connector. |
NEC |
| 30 |
NX8567SAS610-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1561.013 nm. Frequency 192.05 THz. SC-UPC connector. |
NEC |
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