| No. |
Part Name |
Description |
Manufacturer |
| 1 |
CX20187 |
Dolby B-C Type Noise Reduction System |
SONY |
| 2 |
ICL7129ACMH+C10187 |
Low-Noise, 4 1/2 Digit, Single-Chip ADC with Multiplexed LCD Drivers |
MAXIM - Dallas Semiconductor |
| 3 |
K7D801871B-HC25 |
256Kx36 & 512Kx18 SRAM |
Samsung Electronic |
| 4 |
K7D801871B-HC30 |
256Kx36 & 512Kx18 SRAM |
Samsung Electronic |
| 5 |
K7D801871B-HC33 |
256Kx36 & 512Kx18 SRAM |
Samsung Electronic |
| 6 |
K7D801871B-HC35 |
256Kx36 & 512Kx18 SRAM |
Samsung Electronic |
| 7 |
K7D801871B-HC37 |
256Kx36 & 512Kx18 SRAM |
Samsung Electronic |
| 8 |
MA40187D |
Zero Bias Detector Diodes |
Tyco Electronics |
| 9 |
PTB20187 |
4 Watts, 1.8�2.0 GHz Cellular Radio RF Power Transistor |
Ericsson Microelectronics |
| 10 |
T7S01875 |
Phase control SCR. 750A, 1800V. |
Powerex Power Semiconductors |
| 11 |
T8201875 |
Phase Control SCR (750-900 Amperes Avg 100-2200 Volts) |
Powerex Power Semiconductors |
| 12 |
T820187504DH |
1800V, 750A phase control single thyristor |
Powerex Power Semiconductors |
| 13 |
UP01878 |
Composite Device - Composite Transistors |
Panasonic |
| 14 |
UP01878G |
Silicon N-channel MOS FET |
Panasonic |
| 15 |
UP0187B |
Silicon N-channel MOSFET |
Panasonic |
| 16 |
UP0187BG |
Silicon N-channel MOSFET |
Panasonic |
| 17 |
XN01871 |
Composite Device - Composite Transistors |
Panasonic |
| 18 |
XN01872 |
Composite Device - Composite Transistors |
Panasonic |
| 19 |
XN01872G |
Silicon n-channel enhancement MOSFET |
Panasonic |
| 20 |
XP01878 |
Composite Device - Composite Transistors |
Panasonic |
| | | |
