| No. |
Part Name |
Description |
Manufacturer |
| 1 |
CAT24WC02J-1.8TE13C |
1K/2K/4K/8K/16K-Bit Serial E2PROM |
Catalyst Semiconductor |
| 2 |
CAT24WC02J-1.8TE13F |
1K/2K/4K/8K/16K-Bit Serial E2PROM |
Catalyst Semiconductor |
| 3 |
CAT24WC02J-TE13C |
1K/2K/4K/8K/16K-Bit Serial E2PROM |
Catalyst Semiconductor |
| 4 |
CAT24WC02J-TE13F |
1K/2K/4K/8K/16K-Bit Serial E2PROM |
Catalyst Semiconductor |
| 5 |
LMH6702J-QML |
1.7 GHz, Ultra Low Distortion, Wideband Op Amp |
National Semiconductor |
| 6 |
LMH6702J-QML |
1.7 GHz, Ultra Low Distortion, Wideband Op Amp |
National Semiconductor |
| 7 |
LMH6702J-QMLV |
1.7 GHz, Ultra Low Distortion, Wideband Op Amp 8-CDIP -55 to 125 |
Texas Instruments |
| 8 |
M5M27C202J-12 |
2097152-BIT(131072-WORD BY 16-BIT) CMOS ONE TIME REPROGRAMMABLE ROM |
Mitsubishi Electric Corporation |
| 9 |
M5M27C202J-15 |
2097152-BIT(131072-WORD BY 16-BIT) CMOS ONE TIME REPROGRAMMABLE ROM |
Mitsubishi Electric Corporation |
| 10 |
REF02J-G107 |
+5V, +10V Precision Voltage References |
MAXIM - Dallas Semiconductor |
| 11 |
SG2002J-883B |
Darlington Transistor Array |
Microsemi |
| 12 |
SG2002J-JAN |
Darlington Transistor Array |
Microsemi |
| 13 |
SG2802J-883B |
Darlington Transistor Array |
Microsemi |
| 14 |
SG2802J-JAN |
Darlington Transistor Array |
Microsemi |
| 15 |
TC514102J-10 |
100 ns, 1-bit generation dynamic RAM |
TOSHIBA |
| 16 |
TC514102J-80 |
80 ns, 1-bit generation dynamic RAM |
TOSHIBA |
| 17 |
TC514402J-10 |
100 ns, 4-bit generation dynamic RAM |
TOSHIBA |
| 18 |
TC514402J-80 |
80 ns, 4-bit generation dynamic RAM |
TOSHIBA |
| 19 |
TC551402J-22 |
4,194,304 WORD BY 1-BIT/1,048,576 WORD BY 4 BIT CMOS STATIC RAM |
TOSHIBA |
| 20 |
TC551402J-25 |
4,194,304 WORD BY 1-BIT/1,048,576 WORD BY 4 BIT CMOS STATIC RAM |
TOSHIBA |
| | | |
