| No. |
Part Name |
Description |
Manufacturer |
| 1 |
74LVC00ATTR |
LOW VOLTAGE CMOS QUAD 2-INPUT NAND GATE HIGH PERFORMANCE |
SGS Thomson Microelectronics |
| 2 |
74LVC00ATTR |
LOW VOLTAGE CMOS QUAD 2-INPUT NAND GATE HIGH PERFORMANCE |
ST Microelectronics |
| 3 |
74VHCT00ATTR |
QUAD 2-INPUT NAND GATE |
SGS Thomson Microelectronics |
| 4 |
74VHCT00ATTR |
QUAD 2-INPUT NAND GATE |
ST Microelectronics |
| 5 |
74VHCT16240ATTR |
16-BIT BUS BUFFER WITH 3-STATE OUTPUTS (INVERTED) |
SGS Thomson Microelectronics |
| 6 |
74VHCT16240ATTR |
16-BIT BUS BUFFER WITH 3-STATE OUTPUTS (INVERTED) |
ST Microelectronics |
| 7 |
74VHCT20ATTR |
DUAL 4-INPUT NAND GATE |
SGS Thomson Microelectronics |
| 8 |
74VHCT20ATTR |
DUAL 4-INPUT NAND GATE |
ST Microelectronics |
| 9 |
74VHCT240ATTR |
OCTAL BUS BUFFER WITH 3 STATE OUTPUTS (INVERTED) |
SGS Thomson Microelectronics |
| 10 |
74VHCT240ATTR |
OCTAL BUS BUFFER WITH 3 STATE OUTPUTS (INVERTED) |
ST Microelectronics |
| 11 |
HM514260ATT-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 12 |
HM514260ATT-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 13 |
HM514260ATT-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 14 |
HM514400ATT-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
| 15 |
HM514400ATT-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
| 16 |
HM514400ATT-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
| 17 |
HM514800ATT-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 18 |
HM514800ATT-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 19 |
HM51S4260ATT-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 20 |
HM51S4260ATT-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 21 |
HM51S4260ATT-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 22 |
HM51S4800ATT-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 23 |
HM51S4800ATT-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 24 |
MAX16820ATT+ |
2MHz High-Brightness LED Drivers with High-Side Current Sense and 5000:1 Dimming |
MAXIM - Dallas Semiconductor |
| 25 |
MAX16820ATT+T |
2MHz High-Brightness LED Drivers with High-Side Current Sense and 5000:1 Dimming |
MAXIM - Dallas Semiconductor |
| 26 |
NN5118160ATT-50 |
CMOS 1M x 16BIT DYNAMIC RAM |
etc |
| 27 |
NN5118160ATT-60 |
CMOS 1M x 16BIT DYNAMIC RAM |
etc |
| 28 |
NN5118160ATT-70 |
CMOS 1M x 16BIT DYNAMIC RAM |
etc |
| 29 |
RQ3E120ATTB |
Pch -30V -12A Middle Power MOSFET |
ROHM |
| 30 |
RQ6E030ATTCR |
Pch -30V -3A Middle Power MOSFET |
ROHM |
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