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Datasheets found :: 14 Page: | 1 |
Nr. Part Name Description Manufacturer
1 BMT1720B06 Silicon microwave power transistor. BOPOLARICS
2 FCQ20B06 SBD DUAL DIODES - CATHODE COMMON Nihon
3 PP100B060 POW-R-PAK 100A / 600V H-Bridge IGBT Assembly Powerex Power Semiconductors
4 PP150B060 POW-R-PAK 150A / 600V H-Bridge IGBT Assembly Powerex Power Semiconductors
5 PP200B060 POW-R-PAK 200A / 600V H-Bridge IGBT Assembly Powerex Power Semiconductors
6 PP300B060 POW-R-PAK 300A / 600V H-Bridge IGBT Assembly Powerex Power Semiconductors
7 PP400B060 POW-R-PAK 400A / 600V H-Bridge IGBT Assembly Powerex Power Semiconductors
8 T10B065 Glass passivated junction Littelfuse
9 T10B065B T10B series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 55V,max. Ir = 50uA @ Vr = 65V,max, Bulk (500pcs). Littelfuse
10 T10B065T T10B series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 55V,max. Ir = 50uA @ Vr = 65V,max, Tape and reeled (1500pcs). Littelfuse
11 TPD1E10B06 Single Channel ESD in 0402 package with 10pF Capacitance and 6V Breakdown Texas Instruments
12 TPD1E10B06DPYR Single-Channel ESD in 0402 Package With 10pF Capacitance and 6V Breakdown 2-X1SON -40 to 125 Texas Instruments
13 TPD1E10B06DPYT Single-Channel ESD in 0402 Package With 10pF Capacitance and 6V Breakdown 2-X1SON -40 to 125 Texas Instruments
14 TS10B06G Discrete Devices -Bridge Rectifier-Standard Bridge Taiwan Semiconductor


Datasheets found :: 14 Page: | 1 |


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