| No. |
Part Name |
Description |
Manufacturer |
| 1 |
36DY103F040BY2A |
Aluminum Capacitors + 85 C, Large Can |
Vishay |
| 2 |
5962-9753001QXA |
GPLYNX - GENERAL PURPOSE 1394 3.3V LINK LAYER WITH 8/16 BIT I/F, 200BYTE FIFOS W/ ISOCHRONOUS PORT |
Texas Instruments |
| 3 |
BQ25100BYFPR |
250-mA Single Cell Li-Ion Battery Charger, 1mA Termination, 75nA Battery lLakage 6-DSBGA -5 to 125 |
Texas Instruments |
| 4 |
BQ25100BYFPT |
250-mA Single Cell Li-Ion Battery Charger, 1mA Termination, 75nA Battery lLakage 6-DSBGA -5 to 125 |
Texas Instruments |
| 5 |
BQ51010BYFPR |
Highly Integrated Wireless Receiver Qi (WPC V1.1) Compliant Power Supply 28-DSBGA -40 to 85 |
Texas Instruments |
| 6 |
BQ51010BYFPT |
Highly Integrated Wireless Receiver Qi (WPC V1.1) Compliant Power Supply 28-DSBGA -40 to 85 |
Texas Instruments |
| 7 |
BQ51050BYFPR |
Qi (WPC) Compliant Highly Integrated Secondary-Side Direct Lithium Ion Charger. 28-DSBGA |
Texas Instruments |
| 8 |
BQ51050BYFPT |
Qi (WPC) Compliant Highly Integrated Secondary-Side Direct Lithium Ion Charger. 28-DSBGA |
Texas Instruments |
| 9 |
HIN230BY |
+5V powered RS-232 transmitters/receivers |
Harris Semiconductor |
| 10 |
HIN240BY |
+5V powered RS-232 transmitters/receivers |
Harris Semiconductor |
| 11 |
HVB350BYP |
Variable Capacitance Diode |
Hitachi Semiconductor |
| 12 |
HVB350BYP |
Diodes>Variable Capacitance |
Renesas |
| 13 |
ICS84330BY |
700MHZ, LOW JITTER, CRYSTAL-TO-3.3V DIFFERENTIAL LVPECL FREQUENCY SYNTHESIZER |
Integrated Circuit Systems |
| 14 |
ICS84330BYLN |
700MHZ, LOW JITTER, CRYSTAL-TO-3.3V DIFFERENTIAL LVPECL FREQUENCY SYNTHESIZER |
Integrated Circuit Systems |
| 15 |
ICS84330BYLNT |
700MHZ, LOW JITTER, CRYSTAL-TO-3.3V DIFFERENTIAL LVPECL FREQUENCY SYNTHESIZER |
Integrated Circuit Systems |
| 16 |
ICS84330BYT |
700MHZ, LOW JITTER, CRYSTAL-TO-3.3V DIFFERENTIAL LVPECL FREQUENCY SYNTHESIZER |
Integrated Circuit Systems |
| 17 |
IDT70P24L20BY |
4K x 16 1.8V Asynchronous Dual-Port RAM |
IDT |
| 18 |
IDT70P25L20BY |
8K x 16 1.8V Asynchronous Dual-Port RAM |
IDT |
| 19 |
KA2S0680BYDTU |
RECOMMEND FS6S0765RCB |
Fairchild Semiconductor |
| 20 |
LM9140BYZ-10.0 |
Precision Micropower Shunt Voltage Reference |
National Semiconductor |
| 21 |
LM9140BYZ-2.5 |
Precision Micropower Shunt Voltage Reference |
National Semiconductor |
| 22 |
LM9140BYZ-4.1 |
Precision Micropower Shunt Voltage Reference |
National Semiconductor |
| 23 |
LM9140BYZ-5.0 |
Precision Micropower Shunt Voltage Reference |
National Semiconductor |
| 24 |
M38024E1-XXXFP |
RAM size: 640bytes; single-chip 8-bit CMOS microcomputer |
Mitsubishi Electric Corporation |
| 25 |
M38024E1-XXXFS |
RAM size: 640bytes; single-chip 8-bit CMOS microcomputer |
Mitsubishi Electric Corporation |
| 26 |
M38024E1-XXXSP |
RAM size: 640bytes; single-chip 8-bit CMOS microcomputer |
Mitsubishi Electric Corporation |
| 27 |
M38024E1-XXXSS |
RAM size: 640bytes; single-chip 8-bit CMOS microcomputer |
Mitsubishi Electric Corporation |
| 28 |
M38024E1DXXXFP |
RAM size: 640bytes; single-chip 8-bit CMOS microcomputer |
Mitsubishi Electric Corporation |
| 29 |
M38024E1DXXXFS |
RAM size: 640bytes; single-chip 8-bit CMOS microcomputer |
Mitsubishi Electric Corporation |
| 30 |
M38024E1DXXXSP |
RAM size: 640bytes; single-chip 8-bit CMOS microcomputer |
Mitsubishi Electric Corporation |
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