| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AM29PDL310G63WHI |
64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
Advanced Micro Devices |
| 2 |
AM29PDL310G63WHIN |
64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
Advanced Micro Devices |
| 3 |
AM29PDL310G63WSI |
64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
Advanced Micro Devices |
| 4 |
AM29PDL310G63WSIN |
64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
Advanced Micro Devices |
| 5 |
EEFCD0G680ER |
Conductive Polymer Aluminum Electrolytic Capacitors CD |
Panasonic |
| 6 |
EEFCD0G680XE |
Conductive Polymer Aluminum Electrolytic Capacitors CD |
Panasonic |
| 7 |
MDA970G6 |
SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 4.0 Amperes) |
Rectron Semiconductor |
| 8 |
MG20G6EL1 |
High Power Switching Applications |
TOSHIBA |
| 9 |
MG30G6EL2 |
TOSHIBA GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE |
TOSHIBA |
| 10 |
ML120G6 |
LASER DIODES FOR OPTICAL INFORMATION SYSTEMS |
Mitsubishi Electric Corporation |
| 11 |
MPXV5010G6U |
Sensor |
Motorola |
| 12 |
P600G6A4 |
SILICON RECTIFIER(VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 6.0 Amperes) |
Wing Shing Computer Components |
| 13 |
SVSP0G685M |
Surface mount resin molded, Ultra miniaturized chip |
NEC |
| 14 |
TESVSP0G685M8R |
Resign molded chip ultra miniaturized |
NEC |
| 15 |
TK20G60W |
Power MOSFET (N-ch 500V<VDSS≤700V) |
TOSHIBA |
| | | |
