| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1SR154-400TF |
Rectifier Diode (corresponds to AEC-Q101) |
ROHM |
| 2 |
1SR154-400TFTE25 |
Rectifier Diode (corresponds to AEC-Q101) |
ROHM |
| 3 |
1SR154-600TF |
Rectifier Diode (corresponds to AEC-Q101) |
ROHM |
| 4 |
1SR154-600TFTE25 |
Rectifier Diode (corresponds to AEC-Q101) |
ROHM |
| 5 |
1SS380TF |
Switching Diode (corresponds to AEC-Q101) |
ROHM |
| 6 |
1SS380TFTE-17 |
Switching Diode (corresponds to AEC-Q101) |
ROHM |
| 7 |
2N4400TF |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 8 |
2N4400TFR |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 9 |
2N5210TF |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 10 |
2N5210TFR |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 11 |
2N5550TF |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 12 |
2N5550TFR |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 13 |
BA10TFP |
Low saturation voltage type 3-pin regulator |
ROHM |
| 14 |
BC640TF |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 15 |
BC640TFR |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 16 |
CC2540TF256RHAR |
Extended industrial temperature Bluetooth low energy wireless MCU 40-VQFN -40 to 125 |
Texas Instruments |
| 17 |
CC2540TF256RHAT |
Extended industrial temperature Bluetooth low energy wireless MCU 40-VQFN -40 to 125 |
Texas Instruments |
| 18 |
CM100TF-12H |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 19 |
CM100TF-12H |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 20 |
CM100TF-12H |
Six-IGBT IGBTMOD 100 Amperes/600 Volts |
Powerex Power Semiconductors |
| 21 |
CM100TF-24 |
HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 22 |
CM100TF-24H |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
| 23 |
CM100TF-24H |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 24 |
CM100TF-24H |
Six-IGBT IGBTMOD 100 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 25 |
CM100TF-28H |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 26 |
CM100TF-28H |
IGBT Modules:1400V |
Mitsubishi Electric Corporation |
| 27 |
CM100TF-28H |
Six-IGBT IGBTMOD 100 Amperes/1400 Volts |
Powerex Power Semiconductors |
| 28 |
CM150TF-12H |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 29 |
CM150TF-12H |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 30 |
CM150TF-12H |
Six-IGBT IGBTMOD 150 Amperes/600 Volts |
Powerex Power Semiconductors |
| | | |
