| No. |
Part Name |
Description |
Manufacturer |
| 1 |
A29040V-120 |
512K X 8 Bit CMOS 5.0 Volt-only/ Uniform Sector Flash Memory |
AMIC Technology |
| 2 |
A29040V-150 |
512K X 8 Bit CMOS 5.0 Volt-only/ Uniform Sector Flash Memory |
AMIC Technology |
| 3 |
BDW42 |
Power 15A 80V-100V NPN 85W |
ON Semiconductor |
| 4 |
CY7C0430V-100BGC |
3.3V 64K x 18 Synchronous QuadPort Static RAM |
Cypress |
| 5 |
CY7C0430V-100BGI |
3.3V 64K x 18 Synchronous QuadPort Static RAM |
Cypress |
| 6 |
CY7C0430V-133BGC |
3.3V 64K x 18 Synchronous QuadPort Static RAM |
Cypress |
| 7 |
CY7C0430V-133BGI |
3.3V 64K x 18 Synchronous QuadPort Static RAM |
Cypress |
| 8 |
CY7C0850V-133AC |
FLEx36TM 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM |
Cypress |
| 9 |
CY7C0850V-133AI |
FLEx36TM 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM |
Cypress |
| 10 |
CY7C0850V-133BBC |
FLEx36TM 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM |
Cypress |
| 11 |
CY7C0850V-133BBI |
FLEx36TM 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM |
Cypress |
| 12 |
CY7C0850V-167AC |
FLEx36TM 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM |
Cypress |
| 13 |
CY7C0850V-167BBC |
FLEx36TM 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM |
Cypress |
| 14 |
IEC-TO-220V-18 |
TEANSISTOR INSULATORS |
etc |
| 15 |
ISPLSI81080V-125LB272 |
3.3V In-System Programmable SuperBIG High Density PLD |
Lattice Semiconductor |
| 16 |
ISPLSI81080V-125LB492 |
3.3V In-System Programmable SuperBIG High Density PLD |
Lattice Semiconductor |
| 17 |
ISPLSI8600V-125LB272 |
3.3V In-System Programmable SuperBIG High Density PLD |
Lattice Semiconductor |
| 18 |
ISPLSI8600V-125LB492 |
3.3V In-System Programmable SuperBIG High Density PLD |
Lattice Semiconductor |
| 19 |
K2EB-110V-1 |
K-relay. Uniquely designed relay. 2 form C. Coil voltage 110 V DC. Plug-in and solder. Ordinary sensitive relay. Amber sealed type. |
Matsushita Electric Works(Nais) |
| 20 |
K2EBP-110V-1 |
K-relay. Uniquely designed relay. 2 form C. Coil voltage 110 V DC. PC board terminal. Ordinary sensitive relay. Amber sealed type. |
Matsushita Electric Works(Nais) |
| 21 |
K4EB-110V-1 |
K-relay. Uniquely designed relay. 4 form C. Coil voltage 110 V DC. Plug-in and solder. Ordinary sensitive relay. Amber sealed type. |
Matsushita Electric Works(Nais) |
| 22 |
K4EBP-110V-1 |
K-relay. Uniquely designed relay. 4 form C. Coil voltage 110 V DC. PC board terminal. Ordinary sensitive relay. Amber sealed type. |
Matsushita Electric Works(Nais) |
| 23 |
LMZ31520 |
20A SIMPLE SWITCHER® Power Module with 3.0V-14.5V Input in QFN package |
Texas Instruments |
| 24 |
LMZ31530 |
30A SIMPLE SWITCHER® Power Module with 3.0V-14.5V Input in QFN package |
Texas Instruments |
| 25 |
M57183N-316 |
Hybrid IC. Uninsulated DC-DC converter. Input voltage range DC 110V-180V. Output specifications 15V, 100mA; 5V, 350mA. |
Isahaya Electronics Corporation |
| 26 |
MAX5065EVKIT |
10V-14V, Evaluation kit |
MAXIM - Dallas Semiconductor |
| 27 |
NL6EBX-DC110V-1 |
NL-relay. 6PDT, 2 Amp, dil. relay. 6 form C. Coil voltage 110 V DC. Amber sealed type. Single side stable. Contact material: gold-cap over silver palladium. |
Matsushita Electric Works(Nais) |
| 28 |
NL6EBX-L2-DC110V-1 |
NL-relay. 6PDT, 2 Amp, dil. relay. 6 form C. Coil voltage 110 V DC. Amber sealed type. 2 coil latching. Contact material: gold-cap over silver palladium. |
Matsushita Electric Works(Nais) |
| 29 |
NSC800V-1I |
High-performance low-power CMOS microprocessor, 1.0 MHz |
National Semiconductor |
| 30 |
STB5BK50Z-1 |
N-CHANNEL500V-1.22ohm-4.4ATO-220/FP/DPAK/IPAK/I2PAK Zener-Protected SuperMESH��Power MOSFET |
ST Microelectronics |
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