| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1.5KE110C |
Transient voltage suppressor. 1500 W. Breakdown voltage 99.0 V(min), 121 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 2 |
15KP130 |
Glass passivated junction transient voltage suppressor. Vrwm = 130 V. Vbr(min/max) = 144/182.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 231 V @ Ipp = 65 A. |
Panjit International Inc |
| 3 |
15KP130C |
Glass passivated junction transient voltage suppressor. Vrwm = 130 V. Vbr(min/max) = 144/182.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 231 V @ Ipp = 65 A. |
Panjit International Inc |
| 4 |
15KP210 |
Glass passivated junction transient voltage suppressor. Vrwm = 210 V. Vbr(min/max) = 231/296.1 V @ It = 1.0 mA. Ir = 5 uA. Vc = 376 V @ Ipp = 40 A. |
Panjit International Inc |
| 5 |
15KP210A |
Glass passivated junction transient voltage suppressor. Vrwm = 210 V. Vbr(min/max) = 231/296.1 V @ It = 1.0 mA. Ir = 5 uA. Vc = 340 V @ Ipp = 44 A. |
Panjit International Inc |
| 6 |
15KP210C |
Glass passivated junction transient voltage suppressor. Vrwm = 210 V. Vbr(min/max) = 231/296.1 V @ It = 1.0 mA. Ir = 5 uA. Vc = 376 V @ Ipp = 40 A. |
Panjit International Inc |
| 7 |
15KP210CA |
Glass passivated junction transient voltage suppressor. Vrwm = 210 V. Vbr(min/max) = 231/296.1 V @ It = 1.0 mA. Ir = 5 uA. Vc = 340 V @ Ipp = 44 A. |
Panjit International Inc |
| 8 |
1N3826 |
Zener regulator diode. Nom zener voltage 5.1 V. 1 W. |
Motorola |
| 9 |
1N4568A |
Low-level temperature-compensated zener reference diode. Max voltage 0.001 V. |
Motorola |
| 10 |
1N4625UR-1 |
5.1 volt zener diode |
Compensated Devices Incorporated |
| 11 |
1N4733 |
5.1 V, 1 W silicon zener diode |
BKC International Electronics |
| 12 |
1N4733 |
1 W silicon zener diode. Nominal zener voltage 5.1 V. |
Fairchild Semiconductor |
| 13 |
1N4733 |
1 WATT, 5.1 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 14 |
1N4733A |
5.1 V, 1 W silicon zener diode |
BKC International Electronics |
| 15 |
1N4733A |
Voltage regulator diode. Working voltage (nom) 5.1 V . |
Philips |
| 16 |
1N4739 |
9.1 V, 1 W silicon zener diode |
BKC International Electronics |
| 17 |
1N4739 |
1 W silicon zener diode. Nominal zener voltage 9.1 V. |
Fairchild Semiconductor |
| 18 |
1N4739 |
1 WATT, 9.1 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 19 |
1N4739A |
9.1 V, 1 W silicon zener diode |
BKC International Electronics |
| 20 |
1N4739A |
Voltage regulator diode. Working voltage (nom) 9.1 V . |
Philips |
| 21 |
1N4741 |
11 V, 1 W silicon zener diode |
BKC International Electronics |
| 22 |
1N4741 |
1 WATT, 11 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 23 |
1N4741A |
11 V, 1 W silicon zener diode |
BKC International Electronics |
| 24 |
1N4741A |
Voltage regulator diode. Working voltage (nom) 11 V . |
Philips |
| 25 |
1N4741A |
11 V, 1 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 26 |
1N4757A |
51 V, 1 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 27 |
1N4763A |
91 V, 1 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 28 |
1N4765 |
9.1 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
| 29 |
1N4765A |
9.1 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
| 30 |
1N4765A |
Low-level temperature-compensated zener reference diode. Max voltage 0.141 V. |
Motorola |
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