No. |
Part Name |
Description |
Manufacturer |
1 |
2001-6151-02 |
DC-4 GHz, SMA termination |
MA-Com |
2 |
2001-6151-02 |
SMA Terminations |
Tyco Electronics |
3 |
2021-1311-02 |
Short circuits and dust caps |
MA-Com |
4 |
2021-1311-02 |
Short Circuits and Dust Caps |
Tyco Electronics |
5 |
2082-6191-02 |
2 Watt, DC-18 GHz, Fixed coaxial attenuator |
MA-Com |
6 |
2082-6191-02 |
Fixed Coaxial Attenuators |
Tyco Electronics |
7 |
3B31-02 |
Isolated Voltage Input |
Analog Devices |
8 |
3B41-02 |
Isolated Wide Bandwidth Volt Input Signal Conditioning Module |
Analog Devices |
9 |
546-93-108-12-101-028 |
Pin Grid Array sockets Press-fit terminations |
Precid-Dip Durtal |
10 |
5B31-02 |
Isolated V Input - 4 Hz Bandwidth Signal Conditioning Module |
Analog Devices |
11 |
5B41-02 |
Isolated Wide Bandwidth V Input Signal Conditioning Module |
Analog Devices |
12 |
7B31-02-1 |
Isolated Voltage Input Signal Conditioning Module - 3 Hz Bandwidth |
Analog Devices |
13 |
7B31-02-2 |
Isolated Voltage Input Signal Conditioning Module - 3 Hz Bandwidth |
Analog Devices |
14 |
7B41-02-1 |
Wide Band Isolation Input Module |
Analog Devices |
15 |
7B41-02-2 |
Wide Band Isolation Input Module |
Analog Devices |
16 |
AM82731-025 |
S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS |
SGS Thomson Microelectronics |
17 |
AM82731-025 |
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS |
ST Microelectronics |
18 |
BAP1321-02 |
Silicon PIN diode |
NXP Semiconductors |
19 |
BAP1321-02 |
Silicon PIN diode |
Philips |
20 |
BAP51-02 |
General purpose PIN diode |
Leshan Radio Company |
21 |
BAP51-02 |
Pin Diodes |
Micro Commercial Components |
22 |
BAP51-02 |
General purpose PIN diode |
NXP Semiconductors |
23 |
BAP51-02 |
General purpose PIN diode |
Philips |
24 |
BAS581-02V |
Schottky Diode in SOD-523 |
Vishay |
25 |
BBY51-02L |
Diodes for low voltage VCO applications |
Infineon |
26 |
BBY51-02W |
Varactordiodes - Silicon high Q hyperabrupt tuning diode |
Infineon |
27 |
BBY51-02W |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Low series inductance) |
Siemens |
28 |
C5331-02 |
APD module |
Hamamatsu Corporation |
29 |
CBR1-020 |
Leaded Bridge Rectifier General Purpose |
Central Semiconductor |
30 |
CF001-02 |
1.2 dB, 12 GHz, GaAs pseudomorphic HEMT and MESFET chip |
CELERITEK |
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