| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SC5108FT |
Transistor Silicon NPN Epitaxial Planar Type For VCO Application |
TOSHIBA |
| 2 |
AU108F |
Germanium Diffused Collector PNP, Horizontal Large screen TV deflection driver |
SGS-ATES |
| 3 |
BC108F |
Trans GP BJT NPN 20V 0.1A 3-Pin TO-18 Box |
New Jersey Semiconductor |
| 4 |
BCR108F |
Single digital (Built-In Resistor) AF-Transistors in TSFP-3 Package |
Infineon |
| 5 |
BCR108FE6327 |
Digital Transistors - R1= 2,2 kOhm ; R2= 47 kOhm |
Infineon |
| 6 |
BM6108FV-LB |
Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation |
ROHM |
| 7 |
BM6108FV-LBE2 |
Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation |
ROHM |
| 8 |
ES5108F |
3 1/2 digit ADC |
Cyrustek Co |
| 9 |
HA16108FP |
Switching regulator |
Hitachi Semiconductor |
| 10 |
HA16108FP |
PWM Switching Regulator for High-performance Voltage Mode Control |
Hitachi Semiconductor |
| 11 |
HA16108FP |
Standard IC>General-Purpose Linear>ICs for AC/DC Converter |
Renesas |
| 12 |
HL-C108F |
Tempo di scansione di soli 100?s,il pi veloce in campo industriale |
etc |
| 13 |
HL-C108F-B |
Tempo di scansione di soli 100?s,il pi veloce in campo industriale |
etc |
| 14 |
HL-C108F-BK |
Tempo di scansione di soli 100?s,il pi veloce in campo industriale |
etc |
| 15 |
LM108F |
Super-Beta Operational Amplifier |
Intersil |
| 16 |
M34280M1-108FP |
SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER for INFRARED REMOTE CONTROL TRANSMITTERS |
Mitsubishi Electric Corporation |
| 17 |
MAD1108F |
Monolithic diode array. High current/fast switching. |
Motorola |
| 18 |
MP108FD |
POWER OPERATIONAL AMPLIFIER |
Apex Microtechnology Corporation |
| 19 |
NJU26108FR1 |
SRS CSII 5.1 AND TruSurround XT Decoder |
New Japan Radio |
| 20 |
NJU7108F3 |
LOW POWER AND LOW OFFSET VOLTAGE SUPER SMALL-SIZED SINGLE C-MOS COMPARATOR |
New Japan Radio |
| 21 |
PD69108FILQ |
PoE PSE Manager |
Microsemi |
| 22 |
PN108F |
Opto-Electronic Device - Photo Detectors - Phototransistors |
Panasonic |
| 23 |
PNZ108F |
Opto-Electronic Device - Photo Detectors - Phototransistors |
Panasonic |
| 24 |
RN1108F |
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
TOSHIBA |
| 25 |
RN1108FT |
Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. |
TOSHIBA |
| 26 |
RN2108F |
Transistor Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
TOSHIBA |
| 27 |
RN2108FT |
Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. |
TOSHIBA |
| 28 |
SA9108F |
TWO PHASE BIDIRECTIONAL POWER/ENERGY METERING IC WITH INSTANTANEOUS PULSE OUTPUT |
Sames |
| 29 |
SA9108FFA |
Two phase bidirectional power/energy metering IC with instaneous pulse output |
Sames |
| 30 |
SA9108FPA |
Two phase bidirectional power/energy metering IC with instaneous pulse output |
Sames |
| | | |
