| No. |
Part Name |
Description |
Manufacturer |
| 1 |
15KP150 |
Glass passivated junction transient voltage suppressor. Vrwm = 150 V. Vbr(min/max) = 167/211.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 268 V @ Ipp = 56 A. |
Panjit International Inc |
| 2 |
15KP150C |
Glass passivated junction transient voltage suppressor. Vrwm = 150 V. Vbr(min/max) = 167/211.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 268 V @ Ipp = 56 A. |
Panjit International Inc |
| 3 |
1N962 |
0.5W, silicon zener diode. Zener voltage 11V. Test current 11.5mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 4 |
1N962A |
11 V, 11.5 mA, silicon planar zener diode |
Honey Technology |
| 5 |
1N962A |
0.5W, silicon zener diode. Zener voltage 11V. Test current 11.5mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 6 |
1N962B |
11 V, 11.5 mA, silicon planar zener diode |
Honey Technology |
| 7 |
AN8053N |
V(cc): 11.5V; 1A; 1100mW; power amplifier |
Panasonic |
| 8 |
APT5560AN |
V(dss): 550V; 11.5A; 0.6 Ohm; N-channel enhancement mode high voltage power MOSFET |
Advanced Power Technology |
| 9 |
APT6060AN |
V(dss): 600V; 11.5A; 0.6 Ohm; N-channel enhancement mode high voltage power MOSFET |
Advanced Power Technology |
| 10 |
APT8065AVR |
POWER MOS V 800V 11.5A 0.650 Ohm |
Advanced Power Technology |
| 11 |
APT8067HVR |
POWER MOS V 800V 11.5A 0.670 Ohm |
Advanced Power Technology |
| 12 |
BUK9K12-60E |
Dual N-channel 60 V, 11.5 mΩ logic level MOSFET |
Nexperia |
| 13 |
BUK9K12-60E |
Dual N-channel 60 V, 11.5 mΩ logic level MOSFET |
NXP Semiconductors |
| 14 |
BUZ351 |
11.5A, 400V, 0.400 ohm, N-Channel Power MOSFET FN2266.1 |
Intersil |
| 15 |
BZY78 |
Voltage Reference Diode 5.3V, high voltage stability 1% at a zener current of 11.5mA |
Philips |
| 16 |
CFY30 |
GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz) |
Siemens |
| 17 |
CND2050 |
0.5-11.5 GHz Divide by 4 Static Prescaler |
United Monolithic Semiconductors |
| 18 |
CND2050-DAF/20 |
0.5-11.5 GHz Divide by 4 Static Prescaler |
United Monolithic Semiconductors |
| 19 |
ENA2151 |
N-Channel Power MOSFET, 24V, 13A, 11.5mOhm, Dual EFCP |
ON Semiconductor |
| 20 |
FDB12N50F |
N-Channel UniFETTM FRFET� MOSFET 500V, 11.5A, 700m? |
Fairchild Semiconductor |
| 21 |
FDB12N50TM |
N-Channel UniFETTM MOSFET 500V, 11.5A, 650m? |
Fairchild Semiconductor |
| 22 |
FDP12N50 |
N-Channel UniFETTM MOSFET 500V, 11.5A, 650m? |
Fairchild Semiconductor |
| 23 |
FDP12N50NZ |
N-Channel UniFETTM II MOSFET 500V, 11.5A, 520m? |
Fairchild Semiconductor |
| 24 |
FDPF12N50FT |
N-Channel UniFETTM FRFET� MOSFET 500V, 11.5A, 700 m? |
Fairchild Semiconductor |
| 25 |
FDPF12N50NZ |
N-Channel UniFETTM II MOSFET 500V, 11.5A, 520m? |
Fairchild Semiconductor |
| 26 |
FDPF12N50T |
N-Channel UniFETTM MOSFET 500V, 11.5A, 650m? |
Fairchild Semiconductor |
| 27 |
FQN1N60C |
N-Channel QFET� MOSFET 600V, 0.3A, 11.5? |
Fairchild Semiconductor |
| 28 |
FQT1N60C |
N-Channel QFET� MOSFET 600V, 0.2A, 11.5? |
Fairchild Semiconductor |
| 29 |
FR1010EPL |
11.5 mA, spectra-band photocell |
Texas Instruments |
| 30 |
GS88018T-11.5 |
100MHz 11.5ns 512K x 18 8Mb synchronous burst SRAM |
GSI Technology |
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