No. |
Part Name |
Description |
Manufacturer |
1 |
1120 |
High Speed Pin Driver |
TelCom Semiconductor |
2 |
1120-XXX |
1 Watt 1100 Series DC-DC Regulated Converters |
Tecnetics |
3 |
1120-XXXX |
High Current RF Chokes |
JW Miller |
4 |
151911207-001 |
350mWAudio Power Amplifier with Shutdown Mode |
Chengdu Sino Microelectronics System |
5 |
151911207-002 |
350mWAudio Power Amplifier with Shutdown Mode |
Chengdu Sino Microelectronics System |
6 |
152911207-001 |
350mWAudio Power Amplifier with Shutdown Mode |
Chengdu Sino Microelectronics System |
7 |
1N1120 |
Rectifier Diode, Replacement MR1126 |
Motorola |
8 |
1N1227A |
Rectifier Diode, Replacement MR1120 |
Motorola |
9 |
1N1537 |
Rectifier Diode, Replacement MR1120 |
Motorola |
10 |
1N1581 |
Rectifier Diode, Replacement MR1120 |
Motorola |
11 |
2N1120 |
PNP Germanium power transistor for military and industrial power applications |
Motorola |
12 |
2N1120 |
Germanium PNP Transistor |
Motorola |
13 |
2SA1120 |
Trans GP BJT PNP 55V 0.1A 3-Pin TO-92-B1 |
New Jersey Semiconductor |
14 |
2SA1120 |
Silicon PNP Power Transistors TO-126 package |
Savantic |
15 |
2SA1120 |
Silicon PNP epitaxial transistor, strobo flash and audio power amplifier applications |
TOSHIBA |
16 |
2SB1120 |
PNP/NPN Epitaxial Planar Silicon Transistors High-Current Driver Applications |
SANYO |
17 |
2SC1120 |
Silicon NPN epitaxial planar transistor 400MHz Land-Mobil Radio RF power amplifier applications (low supply voltage use) |
TOSHIBA |
18 |
2SK1120 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSII -5 ) DC .DC Converter and Motor Drive Applications |
TOSHIBA |
19 |
472911207-001 |
350mWAudio Power Amplifier with Shutdown Mode |
Chengdu Sino Microelectronics System |
20 |
5962-1120601 |
30W Total Output Power 5 Vin +1.0 Vout Single DC-DC Radiation Hardened Converter in a SBB Package. |
International Rectifier |
21 |
5962-1120602 |
30W Total Output Power 5 Vin +1.2 Vout Single DC-DC Radiation Hardened Converter in a SBB Package. |
International Rectifier |
22 |
5962-1120603 |
30W Total Output Power 5 Vin +1.5 Vout Single DC-DC Radiation Hardened Converter in a SBB Package. |
International Rectifier |
23 |
5962-1120604 |
30W Total Output Power 5 Vin +1.8 Vout Single DC-DC Radiation Hardened Converter in a SBB Package. |
International Rectifier |
24 |
5962-1120605 |
30W Total Output Power 5 Vin +2.5 Vout Single DC-DC Radiation Hardened Converter in a SBB Package. |
International Rectifier |
25 |
5962-1120606 |
30W Total Output Power 5 Vin +3.3 Vout Single DC-DC Radiation Hardened Converter in a SBB Package. |
International Rectifier |
26 |
5962F1120101QXA |
72-Mbit QDR� II+ SRAM Two-Word Burst Architecture with RadStop™ Technology |
Cypress |
27 |
5962F1120101VXA |
72-Mbit QDR� II+ SRAM Two-Word Burst Architecture with RadStop™ Technology |
Cypress |
28 |
5962F1120102QXA |
72-Mbit QDR� II+ SRAM Four-Word Burst Architecture with RadStop™ Technology |
Cypress |
29 |
5962F1120102VXA |
72-Mbit QDR� II+ SRAM Four-Word Burst Architecture with RadStop™ Technology |
Cypress |
30 |
5962F1120201QXA |
72-Mbit QDR� II+ SRAM Two-Word Burst Architecture with RadStop™ Technology |
Cypress |
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