| No. |
Part Name |
Description |
Manufacturer |
| 1 |
11N60S5 |
Cool MOS�� Power Transistor |
Infineon |
| 2 |
AOT11N60 |
Single HV MOSFETs (500V - 1000V) |
Alpha & Omega Semiconductor |
| 3 |
AOTF11N60 |
Single HV MOSFETs (500V - 1000V) |
Alpha & Omega Semiconductor |
| 4 |
AOW11N60 |
Single HV MOSFETs (500V - 1000V) |
Alpha & Omega Semiconductor |
| 5 |
AOWF11N60 |
Single HV MOSFETs (500V - 1000V) |
Alpha & Omega Semiconductor |
| 6 |
FCB11N60 |
600V N-Channel SuperFET |
Fairchild Semiconductor |
| 7 |
FCB11N60TM |
600V N-Channel SuperFET |
Fairchild Semiconductor |
| 8 |
FCI11N60 |
600V N-Channel MOSFET |
Fairchild Semiconductor |
| 9 |
FCP11N60 |
600V N-Channel SuperFET |
Fairchild Semiconductor |
| 10 |
FCP11N60F |
600V N-Channel MOSFET |
Fairchild Semiconductor |
| 11 |
FCP11N60N |
N-Channel SupreMOS� MOSFET 600V, 10.8A, 299m? |
Fairchild Semiconductor |
| 12 |
FCPF11N60 |
600V N-Channel SuperFET |
Fairchild Semiconductor |
| 13 |
FCPF11N60F |
600V N-Channel MOSFET |
Fairchild Semiconductor |
| 14 |
FCPF11N60NT |
N-Channel SupreMOS� MOSFET 600V, 10.8A, 299m? |
Fairchild Semiconductor |
| 15 |
KP11N60D |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
| 16 |
KP11N60F |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
| 17 |
KPS11N60D |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
| 18 |
KPS11N60F |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
| 19 |
MGP11N60E |
Insulated Gate Bipolar Transistor |
Motorola |
| 20 |
MGP11N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 21 |
MGP11N60ED |
SHORT CIRCUIT RATED LOW ON-VOLTAGE |
ON Semiconductor |
| 22 |
MGP11N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 23 |
OM11N60A |
600V Single N-Channel Hi-Rel MOSFET in a TO-254AA package |
International Rectifier |
| 24 |
OM11N60SA |
600V Single N-Channel Hi-Rel MOSFET in a TO-254AA package |
International Rectifier |
| 25 |
OM11N60SW |
600V Single N-Channel Hi-Rel MOSFET in a D3 package |
International Rectifier |
| 26 |
R3111N601A-TR |
Low voltage detector. Detector threshold (-Vdet) 6.0V. Output type: Nch open drain. Standard taping specification TR |
Ricoh |
| 27 |
R3111N601C-TR |
Low voltage detector. Detector threshold (-Vdet) 6.0V. Output type: CMOS. Standard taping specification TR |
Ricoh |
| 28 |
SPA11N60C2 |
for lowest Conduction Losses & fastest Switching |
Infineon |
| 29 |
SPA11N60C3 |
for lowest Conduction Losses & fastest Switching |
Infineon |
| 30 |
SPB11N60C2 |
for lowest Conduction Losses & fastest Switching |
Infineon |
| | | |
