| No. |
Part Name |
Description |
Manufacturer |
| 1 |
ATF-10100 |
0.5-12 GHz Low Noise Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 2 |
ATF-10100-GP3 |
0.5-12 GHz Low Noise Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 3 |
ATF-10136 |
0.5-12 GHz Low Noise Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 4 |
ATF-10136-STR |
0.5-12 GHz Low Noise Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 5 |
ATF-10136-TR1 |
0.5-12 GHz Low Noise Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 6 |
ATF-10236 |
0.5-12 GHz Low Noise Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 7 |
ATF-10236-STR |
0.5-12 GHz Low Noise Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 8 |
ATF-10236-TR1 |
0.5-12 GHz Low Noise Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 9 |
ATF-10736 |
0.5-12 GHz General Purpose Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 10 |
ATF-10736-STR |
0.5-12 GHz General Purpose Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 11 |
ATF-10736-TR1 |
0.5-12 GHz General Purpose Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 12 |
ATF-10736-TRI |
0.5?12 GHz General Purpose Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 13 |
ATF10136 |
0.5-12 GHz Low Noise Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 14 |
ATF10236 |
0.5?12 GHz Low Noise Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 15 |
ATF10736 |
0.5?12 GHz General Purpose Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 16 |
BAT14-098 |
Silicon Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type) |
Siemens |
| 17 |
BAT14-099 |
Silicon Dual Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type) |
Siemens |
| 18 |
BAT15-03W |
Silicon Schottky Diode (DBS mixer applications to 12 GHz Low noise figure Low barrier type) |
Siemens |
| 19 |
BAT15-04 |
Silicon Dual Schottky Diode (DBS mixer applications to 12 GHz Low noise figure Low barrier type) |
Siemens |
| 20 |
BAT15-04W |
Schottky Diodes - Silicon RF Schottky diode for DBS mixer applications up to 12 GHz |
Infineon |
| 21 |
BAT15-05W |
Schottky Diodes - Silicon RF Schottky diode for DBS mixer applications up to 12 GHz |
Infineon |
| 22 |
BAT15-099 |
Silicon Dual Schottky Diode (DBS mixer application to 12 GHz Low noise figure Low barrier type) |
Siemens |
| 23 |
BFP405 |
NPN Silicon RF Transistor (For low current applications For oscillators up to 12 GHz) |
Siemens |
| 24 |
CDM810 |
Microstrip Directional Coupler 8-12 GHz |
CCSIT-CE |
| 25 |
CDM820 |
Microstrip Directional Coupler 8-12 GHz |
CCSIT-CE |
| 26 |
CF001-01 |
1.6 dB, 12 GHz, GaAs pseudomorphic HEMT and MESFET chip |
CELERITEK |
| 27 |
CF001-02 |
1.2 dB, 12 GHz, GaAs pseudomorphic HEMT and MESFET chip |
CELERITEK |
| 28 |
CF001-03 |
0.8 dB, 12 GHz, GaAs pseudomorphic HEMT and MESFET chip |
CELERITEK |
| 29 |
CF005-01 |
8.5 dB, 12 GHz, broadband power GaAs MESFET chip |
CELERITEK |
| 30 |
CF007-01 |
2.2 dB, 12 GHz, dual-gate GaAs FET chip |
CELERITEK |
| | | |
