| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N1200C |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 2 |
ADUM1200CR |
Dual-Channel Digital Isolator (2/0 Channel Directionality) |
Analog Devices |
| 3 |
ADUM1200CR-RL7 |
Dual-Channel Digital Isolator (2/0 Channel Directionality) |
Analog Devices |
| 4 |
ADUM1200CRZ |
Dual-Channel Digital Isolator (2/0 Channel Directionality) |
Analog Devices |
| 5 |
ADUM1200CRZ-RL7 |
Dual-Channel Digital Isolator (2/0 Channel Directionality) |
Analog Devices |
| 6 |
B1200C |
solid state crowbar devices |
Teccor Electronics |
| 7 |
B1200CA |
200 mA, battrax SLIC protector |
Teccor Electronics |
| 8 |
B1200CC |
200 mA, battrax SLIC protector |
Teccor Electronics |
| 9 |
ERJ1GNF1200C |
General Purpose Precision Thick Chip Resistors |
Panasonic |
| 10 |
ERJU01F1200C |
Anti-Sulfurated Thick Film Chip Resistors |
Panasonic |
| 11 |
KM416C1200C |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 12 |
KM416C1200CJ-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 13 |
KM416C1200CJ-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 14 |
KM416C1200CJL-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 15 |
KM416C1200CJL-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 16 |
KM416C1200CT-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 17 |
KM416C1200CT-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 18 |
KM416C1200CTL-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 19 |
KM416C1200CTL-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 20 |
KM416V1200C |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 21 |
KM416V1200CJ-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 22 |
KM416V1200CJ-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 23 |
KM416V1200CJL-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 24 |
KM416V1200CJL-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 25 |
KM416V1200CT-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 26 |
KM416V1200CT-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 27 |
KM416V1200CTL-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 28 |
KM416V1200CTL-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 29 |
LFX1200C-03F900C |
The ispXPGA architecture |
Lattice Semiconductor |
| 30 |
LFX1200C-03F900C |
The ispXPGA architecture |
Lattice Semiconductor |
| | | |
