| No. |
Part Name |
Description |
Manufacturer |
| 1 |
MTD12N06EZL |
OBSOLETE - REPLACEMENT P/N# - NONE |
ON Semiconductor |
| 2 |
MTD12N06EZL-D |
TMOS E-FET High Energy Power FET DPAK for Surface Mount or Insertion Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 3 |
MTP12N06 |
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM |
Motorola |
| 4 |
MTP12N06EZL |
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM |
Motorola |
| 5 |
MTP12N06EZL |
OBSOLETE - N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 6 |
MTP12N06EZL-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 7 |
PHB112N06T |
N-channel enhancement mode field-effect transistor |
Philips |
| 8 |
PHP112N06T |
N-channel enhancement mode field-effect transistor |
Philips |
| 9 |
RFD12N06RLE |
17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
Fairchild Semiconductor |
| 10 |
RFD12N06RLE |
12A/ 60V/ 0.135 Ohm/ N-Channel/ Logic Level/ Power MOSFETs |
Intersil |
| 11 |
RFD12N06RLESM |
60V N-Channel Logic Level UltraFET PowerMOSFET |
Fairchild Semiconductor |
| 12 |
RFD12N06RLESM |
12A/ 60V/ 0.135 Ohm/ N-Channel/ Logic Level/ Power MOSFETs |
Intersil |
| 13 |
RFD12N06RLESM9A |
60V N-Channel Logic Level UltraFET PowerMOSFET |
Fairchild Semiconductor |
| 14 |
RFP12N06 |
17A/ 60V/ 0.071 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET |
Fairchild Semiconductor |
| 15 |
RFP12N06RLE |
17A/ 60V/ 0.071 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET |
Fairchild Semiconductor |
| 16 |
RFP12N06RLE |
12A/ 60V/ 0.135 Ohm/ N-Channel/ Logic Level/ Power MOSFETs |
Intersil |
| 17 |
STD12N06 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 18 |
STD12N06 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 19 |
STD12N06 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 20 |
STD12N06L |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 21 |
STD12N06L |
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 22 |
STD12N06L |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 23 |
STK12N06L |
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
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