| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N1412 |
Rectifier Diode |
Motorola |
| 2 |
2N1412 |
PNP germanium power transistor for high-voltage in military and industrial equipment |
Motorola |
| 3 |
2N1412 |
Germanium PNP Transistor |
Motorola |
| 4 |
2N1412 |
Germanium PNP Power Transistor, TO-36 Package |
Silicon Transistor Corporation |
| 5 |
2N1412A |
PNP germanium power transistor for high-voltage in military and industrial equipment |
Motorola |
| 6 |
2SA1412 |
Silicon transistor |
NEC |
| 7 |
2SA1412-Z |
PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3 |
NEC |
| 8 |
2SB1412 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 9 |
2SB1412-P |
DPACK Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 10 |
2SB1412-Q |
DPACK Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 11 |
2SB1412-R |
DPACK Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 12 |
2SD1412 |
Silicon NPN triple diffused high current power switching transistor |
TOSHIBA |
| 13 |
2SD1412A |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 14 |
2SK1412 |
High-Voltage High-Speed Switching Applications |
SANYO |
| 15 |
2SK1412LS |
N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications |
SANYO |
| 16 |
ADG1412 |
1.8 Ω Max On Resistance, ±15 V/12 V/±5 V, iCMOS®, Quad SPST Switch |
Analog Devices |
| 17 |
ADUM1412 |
Quad-Channel Digital Isolator |
Analog Devices |
| 18 |
CM1412 |
2 Channel Headset Microphone EMI Filter with ESD Protection, OptiGuard™ Coating |
California Micro Devices Corp |
| 19 |
CM1412 |
2-Channel Headset Microphone EMI Filter with ESD Protection |
ON Semiconductor |
| 20 |
CM1412-03CP |
2 Channel Headset Microphone EMI Filter with ESD Protection, OptiGuard™ Coating |
California Micro Devices Corp |
| 21 |
CM1412-03CS |
2 Channel Headset Microphone EMI Filter with ESD Protection, OptiGuard™ Coating |
California Micro Devices Corp |
| 22 |
CS51412 |
1.5A, 260 kHz AND 520 kHz, LOW VOLTAGE BUCK REGULATORS WITH EXTERNAL BIAS OR SYNCHRONIZATION CAPABILITY |
ON Semiconductor |
| 23 |
CS51412E |
1.5A, 260 kHz AND 520 kHz, LOW VOLTAGE BUCK REGULATORS WITH EXTERNAL BIAS OR SYNCHRONIZATION CAPABILITY |
ON Semiconductor |
| 24 |
CS51412G |
1.5A, 260 kHz AND 520 kHz, LOW VOLTAGE BUCK REGULATORS WITH EXTERNAL BIAS OR SYNCHRONIZATION CAPABILITY |
ON Semiconductor |
| 25 |
CTAN1412V-G |
Transient Voltage Suppressor (TVS) Array, VC=20V, VPV=16kV, IPP=12A |
Comchip Technology |
| 26 |
CY7C1412AV18 |
36-Mbit QDR-II(TM) SRAM 2-Word Burst Architecture |
Cypress |
| 27 |
CY7C1412AV18-167BZXC |
36-Mbit QDR-II(TM) SRAM 2-Word Burst Architecture |
Cypress |
| 28 |
CY7C1412KV18-250BZC |
36-Mbit QDR� II SRAM Two-Word Burst Architecture |
Cypress |
| 29 |
CY7C1412KV18-250BZCT |
36-Mbit QDR� II SRAM Two-Word Burst Architecture |
Cypress |
| 30 |
CY7C1412KV18-250BZI |
36-Mbit QDR� II SRAM Two-Word Burst Architecture |
Cypress |
| | | |
