| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N1616 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 2 |
1N1616 |
Rectifier diode |
Motorola |
| 3 |
1N1616 |
Diode Switching 600V 15A 2-Pin DO-4 |
New Jersey Semiconductor |
| 4 |
1N1616A |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 5 |
1N1616A |
Diode 600V 16A 2-Pin DO-4 |
New Jersey Semiconductor |
| 6 |
1N1616R |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 7 |
2N1616 |
Silicon NPN Transistor |
Motorola |
| 8 |
2N1616 |
Trans GP BJT NPN 50V 0.5A 3-Pin TO-39 Box |
New Jersey Semiconductor |
| 9 |
2N1616 |
NPN SILICON TRANSISTOR |
SemeLAB |
| 10 |
2N1616 |
NPN Triple Diffused - Military applications |
SESCOSEM |
| 11 |
2N1616A |
Silicon NPN Transistor |
Motorola |
| 12 |
2SB1616 |
MEDIUM POWER TRANSISTER |
ROHM |
| 13 |
2SD1616 |
Silicon transistor |
NEC |
| 14 |
2SD1616 |
NPN EPITAXIAL SILICON TRANSISTOR |
Unisonic Technologies |
| 15 |
2SD1616 |
Transistor for audio frequency power amplifier |
USHA India LTD |
| 16 |
2SD1616(C) |
Silicon transistor |
NEC |
| 17 |
2SD1616(C)-T |
Silicon transistor |
NEC |
| 18 |
2SD1616-T |
Silicon transistor |
NEC |
| 19 |
2SD1616-T/JD |
Silicon transistor |
NEC |
| 20 |
2SD1616-T/JM |
Silicon transistor |
NEC |
| 21 |
2SD1616/JD |
Silicon transistor |
NEC |
| 22 |
2SD1616/JM |
Silicon transistor |
NEC |
| 23 |
2SD1616A |
NPN SILICON TRANSISTOR |
Micro Electronics |
| 24 |
2SD1616A |
Silicon transistor |
NEC |
| 25 |
2SD1616A |
NPN EPITAXIAL SILICON TRANSISTOR |
Unisonic Technologies |
| 26 |
2SD1616A |
Transistor. Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 1A. |
USHA India LTD |
| 27 |
2SD1616A-T |
Silicon transistor |
NEC |
| 28 |
2SD1616A-T/JD |
Silicon transistor |
NEC |
| 29 |
2SD1616A-T/JM |
Silicon transistor |
NEC |
| 30 |
2SD1616A/JD |
Silicon transistor |
NEC |
| | | |
