| No. |
Part Name |
Description |
Manufacturer |
| 1 |
5962-9562701NXD |
1024 x 18 Synchronous FIFO Memory |
Texas Instruments |
| 2 |
5962R-0323501QUA |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 3 |
5962R-0323501QUC |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 4 |
5962R-0323501QUX |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish factory option. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 5 |
5962R-0323501VUA |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish hot solder dipped. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 6 |
5962R-0323501VUC |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 7 |
5962R-0323501VUX |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish factory option. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 8 |
5962R-0323502QUA |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 9 |
5962R-0323502QUC |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 10 |
5962R-0323502QUX |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish factory option. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 11 |
5962R-0323502VUA |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish hot solder dipped. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 12 |
5962R-0323502VUC |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 13 |
5962R-0323502VUX |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish factory option. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 14 |
A67L8318 SERIES |
256K X 16/18, 128K X 32/36 LVTTL, Pipelined DBA SRAM |
AMIC Technology |
| 15 |
AS5SS256K18 |
256K x 18 SSRAM Synchronous Burst SRAM, Flow-Through |
Austin Semiconductor |
| 16 |
AS5SS256K18DQ-10_IT |
256K x 18 SSRAM - synchronous burst SRAM, flow-thru |
Austin Semiconductor |
| 17 |
AS5SS256K18DQ-10_XT |
256K x 18 SSRAM - synchronous burst SRAM, flow-thru |
Austin Semiconductor |
| 18 |
AS5SS256K18DQ-8_IT |
256K x 18 SSRAM - synchronous burst SRAM, flow-thru |
Austin Semiconductor |
| 19 |
AS5SS256K18DQ-8_XT |
256K x 18 SSRAM - synchronous burst SRAM, flow-thru |
Austin Semiconductor |
| 20 |
AS5SS256K18DQ-9_IT |
256K x 18 SSRAM - synchronous burst SRAM, flow-thru |
Austin Semiconductor |
| 21 |
AS5SS256K18DQ-9_XT |
256K x 18 SSRAM - synchronous burst SRAM, flow-thru |
Austin Semiconductor |
| 22 |
ATU18 |
The ATU18 series of ULCs is well suited for conversion of latest CPLDs and FPGAs. We can support within one ULC from 62 Kbits to 1195 Kbits DPRAM and from 82 Kgates to 1575 Kgates. |
Atmel |
| 23 |
BAL99LT1 |
CASE 318-08, STYLE 18 SOT-23 (TO-236AB) |
Motorola |
| 24 |
BSP 318 S |
N-Channel MOSFET, 60V, SOT-223, RDSon = 90mW, 2.6A, LL |
Infineon |
| 25 |
CY7C0430V |
3.3V 64K x 18 Synchronous QuadPort Static RAM |
Cypress |
| 26 |
CY7C0430V-100BGC |
3.3V 64K x 18 Synchronous QuadPort Static RAM |
Cypress |
| 27 |
CY7C0430V-100BGI |
3.3V 64K x 18 Synchronous QuadPort Static RAM |
Cypress |
| 28 |
CY7C0430V-133BGC |
3.3V 64K x 18 Synchronous QuadPort Static RAM |
Cypress |
| 29 |
CY7C0430V-133BGI |
3.3V 64K x 18 Synchronous QuadPort Static RAM |
Cypress |
| 30 |
CY7C0830V |
FLEx18TM 3.3V 32K/64K/128K/256K/512K x 18 Synchronous Dual-Port RAM |
Cypress |
| | | |
