No. |
Part Name |
Description |
Manufacturer |
1 |
1.5KE440CA |
Transient voltage suppressor. 1500 W. Breakdown voltage 418.0 V(min), 462.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
2 |
1N4746 |
1 W silicon zener diode. Nominal zener voltage 18.0 V. |
Fairchild Semiconductor |
3 |
1N5248 |
500 mW silicon zener diode. Nominal zener voltage 18.0 V. |
Fairchild Semiconductor |
4 |
1N5538A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 18.0 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
5 |
1N5538B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 18.0 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
6 |
1N5538C |
0.4 W, low voltage avalanche diode. Nominal zener voltage 18.0 V. Test current 1.0 mAdc. +-2% tolerance. |
Jinan Gude Electronic Device |
7 |
1N5538D |
0.4 W, low voltage avalanche diode. Nominal zener voltage 18.0 V. Test current 1.0 mAdc. +-1% tolerance. |
Jinan Gude Electronic Device |
8 |
1N967 |
500 mW silicon planar zener diode. Max zener voltage 18.0 V. |
Fairchild Semiconductor |
9 |
1S761H |
Silicon Difused Junction, Zener Diode Vz=13.5...18.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
10 |
346 |
T-1 3/4 subminiature, miniature grooved lamp. 18.0 volts, 0.04 amps. |
Gilway Technical Lamp |
11 |
370 |
T-1 3/4 subminiature, miniature flanged lamp. 18.0 volts, 0.04 amps. |
Gilway Technical Lamp |
12 |
7220 |
T-1 subminiature, wire lead lamp. 18.0 volts, 0.026 amps. |
Gilway Technical Lamp |
13 |
7241 |
T-1 subminiature, miniature flanged lamp. 18.0 volts, 0.026 amps. |
Gilway Technical Lamp |
14 |
7370 |
T-1 3/4 subminiature, bi-pin lamp. 18.0 volts, 0.04 amps. |
Gilway Technical Lamp |
15 |
8099 |
T-1 subminiature, bi-pin lamp. 18.0 volts, 0.026 amps. |
Gilway Technical Lamp |
16 |
8536 |
T-1 3/4 subminiature, midget screw lamp. 18.0 volts, 0.04 amps. |
Gilway Technical Lamp |
17 |
AUIRF7675M2 |
150V Automotive Grade Single N-Channel HEXFET Power MOSFET rated at 18.0 amperes optimized with low on resistance. |
International Rectifier |
18 |
AUIRF7675M2TR |
150V Automotive Grade Single N-Channel HEXFET Power MOSFET rated at 18.0 amperes optimized with low on resistance. |
International Rectifier |
19 |
CGHV1J006D |
6W, 18.0 GHz, GaN HEMT Die |
Wolfspeed |
20 |
CGHV1J025D |
25W, 18.0 GHz, GaN HEMT Die |
Wolfspeed |
21 |
CGHV1J070D |
70W, 18.0 GHz, GaN HEMT Die |
Wolfspeed |
22 |
HMC441 |
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6.0 - 18.0 GHz |
Hittite Microwave Corporation |
23 |
HMC459 |
GaAs PHEMT MMIC POWER AMPLIFIER, DC - 18.0 GHz |
Hittite Microwave Corporation |
24 |
MA2180-A |
Si planar. Stabilized power supply. Nom zener voltage 18.0 V. |
Panasonic |
25 |
MA2180-B |
Si planar. Stabilized power supply. Nom zener voltage 18.0 V. |
Panasonic |
26 |
MMBZ5248B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 18.0 V. Test current 7.0 mA. |
Chenyi Electronics |
27 |
SGA-3486 |
DC-5000 MHz, cascadable SIGe HBT MMIC amplifier. High gain: 18.0 dB at 1950 MHz. |
Stanford Microdevices |
28 |
WD100 |
DC/DC converter, 15 watts. Input voltage 9.0-18.0 VDC. Output voltage 3.3 VDC. Output current 3000 mA. Input current 20 mA(no load), 1056 mA(full load). |
International Power Sources |
29 |
WD100LU |
DC/DC converter, 10 watts. UL1950 approvals. Input voltage 9.0-18.0 VDC. Output voltage 3.3 VDC. Output current 3000 mA. Input current 20 mA(no load), 1056 mA(full load). |
International Power Sources |
30 |
WD101 |
DC/DC converter, 15 watts. Input voltage 9.0-18.0 VDC. Output voltage 5.0 VDC. Output current 2000 mA. Input current 30 mA(no load), 1100 mA(full load). |
International Power Sources |
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