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Datasheets for 189

Datasheets found :: 1119
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No. Part Name Description Manufacturer
1 1.5FMCJ180A Surface mount transient voltage suppressor (TVS). 1500W peak power, 5.0W steady state. Breakdown voltage 171V(min), 189V(max). For bidirectional use C or CA suffix. Rectron Semiconductor
2 1.5KE180A 171- 189V transient voltage suppressor DC Components
3 1.5KE180A GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 171V(min), 189V(max). For bidirectional use C or CA suffix. Rectron Semiconductor
4 1.5KE180A Transient voltage suppressor. 1500 W. Breakdown voltage 171.0 V(min), 189.0 V(max). Test current 1.0 mA. Shanghai Sunrise Electronics
5 1.5KE180CA Transient voltage suppressor. 1500 W. Breakdown voltage 171.0 V(min), 189.0 V(max). Test current 1.0 mA. Shanghai Sunrise Electronics
6 15KP170 Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/239.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 304 V @ Ipp = 49 A. Panjit International Inc
7 15KP170A Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/217.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 275 V @ Ipp = 55 A. Panjit International Inc
8 15KP170C Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/239.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 304 V @ Ipp = 49 A. Panjit International Inc
9 15KP170CA Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/217.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 275 V @ Ipp = 55 A. Panjit International Inc
10 1891-03 RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS SGS Thomson Microelectronics
11 1891-03 RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS ST Microelectronics
12 1892 MATRIX SURROUND SOUND PROCESSOR WITH SOUND PROCESSOR NEC
13 1893-03 RF & MICROWAVE TRANSISTORS 1.6 GHZ SATCOM APPLICATIONS SGS Thomson Microelectronics
14 1893-03 RF & MICROWAVE TRANSISTORS 1.6 GHZ SATCOM APPLICATIONS ST Microelectronics
15 1897 RF & MICROWAVE TRANSISTORS 1.65 GHz SATCOM APPLICATIONS SGS Thomson Microelectronics
16 1897 RF & MICROWAVE TRANSISTORS 1.65 GHz SATCOM APPLICATIONS ST Microelectronics
17 1898 RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS SGS Thomson Microelectronics
18 1898 RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS ST Microelectronics
19 189NQ135 135V 180A Schottky Discrete Diode in a D-67 HALF-Pak package International Rectifier
20 189NQ150 150V 180A Schottky Discrete Diode in a D-67 HALF-Pak package International Rectifier
21 189NQ150R 150V 180A Schottky DISCR. (R) Diode in a D-67 HALF-Pak package International Rectifier
22 1N1189 High Power Standard Recovery Rectifiers - DO5 Stud Devices America Semiconductor
23 1N1189 Silicon-Power Rectifiers Diotec Elektronische
24 1N1189 500V 35A Std. Recovery Diode in a DO-203AB (DO-5)package International Rectifier
25 1N1189 Standard Rectifier (trr more than 500ns) Microsemi
26 1N1189 Silicon Diode Rectifier, cathode connected to case, 35A 500V Motorola
27 1N1189 Silicon Rectifier Diode Motorola
28 1N1189 Diode Switching 500V 40A 2-Pin DO-5 New Jersey Semiconductor
29 1N1189 500 V, 35 A standard recovery rectifier Solid State Devices Inc
30 1N1189A 500V 40A Std. Recovery Diode in a DO-203AB (DO-5)package International Rectifier


Datasheets found :: 1119
Page: | 1 | 2 | 3 | 4 | 5 |



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